Room temperature 1.55 μm emission from InAs...

Journal of Crystal Growth 2000 Vol. 218; Iss. 2-4

Room temperature 1.55 μm emission from InAs quantum dots grown on (0 0 1)InP substrate by molecular beam epitaxy

Y.F Li, X.L Ye, B Xu, F.Q Liu, D Ding, W.H Jiang, Z.Z Sun, Y.C Zhang, H.Y Liu, Z.G Wang
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Volume:
218
Year:
2000
Language:
english
Pages:
4
DOI:
10.1016/s0022-0248(00)00561-3
File:
PDF, 134 KB
english, 2000
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