Study of high quality GaN grown by OMVPE using an...

Journal of Crystal Growth 2000 Vol. 218; Iss. 2-4

Study of high quality GaN grown by OMVPE using an intermediate layer

M Benamara, Z Liliental-Weber, S Kellermann, W Swider, J Washburn, J Mazur, E.D Bourret-Courchesne
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Volume:
218
Year:
2000
Language:
english
Pages:
4
DOI:
10.1016/s0022-0248(00)00568-6
File:
PDF, 188 KB
english, 2000
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