Influence of growth parameters on crack density in thick...

Journal of Crystal Growth 2001 Vol. 230; Iss. 3-4

Influence of growth parameters on crack density in thick epitaxially lateral overgrown GaN layers by hydride vapor phase epitaxy

Chengxin Wang, Hinyiu Anthony Chung, Matthias Seyboth, Markus Kamp, Karl Joachim Ebeling, Rainer Beccard, Michael Heuken
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Volume:
230
Year:
2001
Language:
english
Pages:
4
DOI:
10.1016/s0022-0248(01)01298-2
File:
PDF, 242 KB
english, 2001
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