Volume 230; Issue 3-4

Journal of Crystal Growth

Volume 230; Issue 3-4
3

Profiling band structure in GaN devices by electron holography

Year:
2001
Language:
english
File:
PDF, 198 KB
english, 2001
7

Lateral confined epitaxy of GaN layers on Si substrates

Year:
2001
Language:
english
File:
PDF, 212 KB
english, 2001
13

Growth of AlN films on SiC substrates by RF-MBE and RF-MEE

Year:
2001
Language:
english
File:
PDF, 276 KB
english, 2001
16

Polarization induced 2D hole gas in GaN/AlGaN heterostructures

Year:
2001
Language:
english
File:
PDF, 184 KB
english, 2001
22

Preface

Year:
2001
Language:
english
File:
PDF, 37 KB
english, 2001
25

Impedance spectroscopy analysis of AlGaN/GaN HFET structures

Year:
2001
Language:
english
File:
PDF, 158 KB
english, 2001
32

Ab initio study of the effect of doping on stacking faults in GaN

Year:
2001
Language:
english
File:
PDF, 194 KB
english, 2001
34

Blue emission from arsenic doped gallium nitride

Year:
2001
Language:
english
File:
PDF, 118 KB
english, 2001
37

Thermally induced stress in GaN layers with regard to film coalescence

Year:
2001
Language:
english
File:
PDF, 142 KB
english, 2001
39

Magneto-photoluminescence of AlGaN/GaN quantum wells

Year:
2001
Language:
english
File:
PDF, 137 KB
english, 2001
48

Analysis of the threshold current in nitride-based lasers

Year:
2001
Language:
english
File:
PDF, 194 KB
english, 2001
52

AlGaN-based UV photodetectors

Year:
2001
Language:
english
File:
PDF, 179 KB
english, 2001
54

Author index

Year:
2001
Language:
english
File:
PDF, 66 KB
english, 2001
55

Subject index

Year:
2001
Language:
english
File:
PDF, 44 KB
english, 2001
56

Contents

Year:
2001
Language:
english
File:
PDF, 43 KB
english, 2001