Growth of (1 1̄ 0 1) GaN on a...

Journal of Crystal Growth 2002 Vol. 242; Iss. 1-2

Growth of (1 1̄ 0 1) GaN on a 7-degree off-oriented (0 0 1)Si substrate by selective MOVPE

Yoshio Honda, Norifumi Kameshiro, Masahito Yamaguchi, Nobuhiko Sawaki
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Volume:
242
Year:
2002
Language:
english
Pages:
5
DOI:
10.1016/s0022-0248(02)01353-2
File:
PDF, 180 KB
english, 2002
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