Volume 242; Issue 1-2

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Journal of Crystal Growth
Volume 242; Issue 1-2

Journal of Crystal Growth

Volume 242; Issue 1-2

1

Crystal growth of La2CuO4 and La2−xBaxCuO4 by the travelling-solvent floating zone method

X.L Yan, J.F Zhou, X.J Niu, X.L Chen, Q.Y Tu, X Wu

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 240 KB

english, 2002

2

Structure and growth of pure and Ce3+-doped Li6Gd(BO3)3 single crystals

A.N Shekhovtsov, A.V Tolmachev, M.F Dubovik, E.F Dolzhenkova, T.I Korshikova, B.V Grinyov, V.N Baumer, O.V Zelenskaya

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 146 KB

english, 2002

3

AFM observation of the surface morphology and impurity effects on orthorhombic hen egg-white lysozyme crystals

Y Matsuzuki, T Kubota, X.Y Liu, M Ataka, K.J Takano

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 479 KB

english, 2002

4

Thermodynamic analysis of anion exchange during heteroepitaxy

Y.Q Wang, Z.L Wang, T Brown, A Brown, G May

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 211 KB

english, 2002

5

MOCVD growth of GaInNAs/GaAs multiple quantum wells with nitrogen composition fluctuation

W Zhou, S.J Chua, J.R Dong, J.H Teng

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 141 KB

english, 2002

6

Growth, characterization and nonlinear optical property of chalcone derivative

J Indira, P.Prakash Karat, B.K Sarojini

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 148 KB

english, 2002

7

Effect of Si doping on the growth and microstructure of GaN grown on Si(1 1 1) using SiC as a buffer layer

D Wang, S Yoshida, M Ichikawa

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 463 KB

english, 2002

8

Optical properties of GaAs/GaNxAs1−x quantum well structures grown by migration-enhanced epitaxy

Y.G Hong, C.W Tu

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 149 KB

english, 2002

9

Control of the facet plane formation on solid–liquid interface of LGS

H. Sato, M. Kumatoriya, T. Fujii

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 307 KB

english, 2002

10

On the nature of supersaturation barriers observed during the growth of crystals from aqueous solutions containing impurities

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 233 KB

english, 2002

11

Effect of solvents on the growth morphology and physical characteristics of nonlinear optical γ-glycine crystals

M.Narayan Bhat, S.M. Dharmaprakash

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 245 KB

english, 2002

12

Effects of post-growth thermal annealing on the indium aggregated structures in InGaN/GaN quantum wells

Yen-Sheng Lin, Kung-Jen Ma, C.C Yang, Thomas E Weirich

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 281 KB

english, 2002

13

Study of CdTe and ZnTe single-crystal growth from vapour phase and investigation of the grown crystals

G Ilchuk, V Ukrainetz, A Danylov, V Masluk, J Parlag, O Yaskov

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 102 KB

english, 2002

14

Wetting angles and surface tension of Ge1−xSix melts on different substrate materials

A Cröll, N Salk, F.R Szofran, S.D Cobb, M.P Volz

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 186 KB

english, 2002

15

Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN

D.D Koleske, A.E Wickenden, R.L Henry, M.E Twigg

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 219 KB

english, 2002

16

GaN single crystal growth using high-purity Na as a flux

Masato Aoki, Hisanori Yamane, Masahiko Shimada, Seiji Sarayama, Francis J DiSalvo

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 413 KB

english, 2002

17

Temperature effect of carbon nanotube-confined reaction

C Tang, X.X Ding, Z.W Gan, X.T Huang, J.M Gao, W Liu, S.R Qi

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 234 KB

english, 2002

18

Growth and properties of RE:Zn:LiNbO3 crystals

Y Zhang, Y.H Xu, M.H Li, Y.Q Zhao

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 82 KB

english, 2002

19

Growth of a GaN crystal free from cracks on a (1 1 1)Si substrate by selective MOVPE

Yoshio Honda, Yosuke Kuroiwa, Masahito Yamaguchi, Nobuhiko Sawaki

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 132 KB

english, 2002

20

Growth of (1 1̄ 0 1) GaN on a 7-degree off-oriented (0 0 1)Si substrate by selective MOVPE

Yoshio Honda, Norifumi Kameshiro, Masahito Yamaguchi, Nobuhiko Sawaki

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 180 KB

english, 2002

21

Molecular beam epitaxial growth of GaAs1−XNX with dispersive nitrogen source

S.Z Wang, S.F Yoon, T.K Ng, W.K Loke, W.J Fan

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 199 KB

english, 2002

22

Improvement in crystallinity of ZnSe by inserting a low-temperature buffer layer between the ZnSe epilayer and the GaAs substrate

J.S Song, J.H Chang, S.K Hong, M.W Cho, H Makino, T Hanada, T Yao

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 261 KB

english, 2002

23

Distinct growth behaviours in molecular-beam epitaxy of (In,Ga)As on GaAs(3 1 1)A substrate

Q Gong, R Nötzel, J.H Wolter, H.-P Schönherr, K.H Ploog

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 201 KB

english, 2002

24

Synthesize AlN nanocrystals in organic solvent at atmospheric pressure

Xiao-Peng Hao, Mei-Yan Yu, De-Liang Cui, Xian-Gang Xu, Yu-Jun Bai, Qi-Long Wang, Min-Hua Jiang

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 157 KB

english, 2002

25

Growth and defects of Nd:GdVO4 single crystal

Lianjie Qin, Xianlin Meng, Jiguo Zhang, Li Zhu, Huaijin Zhang, Bingchao Xu, Huaidong Jiang

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 216 KB

english, 2002

26

Self-assembled GaInNAs/GaAs quantum dots grown by solid-source molecular beam epitaxy

Z.Z Sun, S.F Yoon, K.C Yew, W.K Loke, S.Z Wang, T.K Ng

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 220 KB

english, 2002

27

The overgrowth of calcium carbonate hexahydrate on new functionalized polymers

P Malkaj, A Chrissanthopoulos, E Dalas

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 177 KB

english, 2002

28

Epitaxial growth of AlN on sapphire (0 0 0 1) by sputtering: a structural, morphological and optical study

Y Huttel, H Gomez, A Cebollada, G Armelles, M.I Alonso

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 336 KB

english, 2002

29

The modulation of collagen on crystal morphology of calcium carbonate

F.H Shen, Q.L Feng, C.M Wang

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 265 KB

english, 2002

30

Structural characteristic of cubic GaN nucleation layers on GaAs(0 0 1) substrates by MOCVD

X.H Zheng, Z.H Feng, Y.T Wang, W.L Zheng, Q.J Jia, X.M Jiang, Hui Yang, J.W Liang

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 122 KB

english, 2002

31

Crystal growth and characterization of deuterated ammonium dehydrogen phosphate (DADP)

Su Genbo, Zhuang Xinxin, He Youping, Li Zhengdong, Li Guohui, Ma Jingbo

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 94 KB

english, 2002

32

Study of narrow InGaP/(In)GaAs quantum wells

R Kúdela, M Kučera, J Novák, C Ferrari, C Pelosi

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 153 KB

english, 2002

33

The fabrication and characteristics of (Ba0.5Sr0.5)TiO3 thin films prepared by pulsed laser deposition

Guang Yang, Haoshuang Gu, Jie Zhu, Youqing Wang

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 123 KB

english, 2002

34

Compositional control in molecular beam epitaxy growth of GaNyAs1−y on GaAs (0 0 1) using an Ar/N2 RF plasma

J.A Gupta, Z.R Wasilewski, B.J Riel, J Ramsey, G.C Aers, R.L Williams, G.I Sproule, A Perovic, D.D Perovic, T Garanzotis, A.J SpringThorpe

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 357 KB

english, 2002

35

Net acceptor concentration in ZnSe:Sb grown from vapor phase

M. Prokesch, K. Irmscher, U. Rinas, H. Makino, T. Yao

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 126 KB

english, 2002

36

Atomic layer growth of epitaxial TiO2 thin films from TiCl4 and H2O on α-Al2O3 substrates

Jaan Aarik, Aleks Aidla, Hugo Mändar, Teet Uustare, Mikael Schuisky, Anders Hårsta

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 255 KB

english, 2002

37

Contents Continued

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 51 KB

english, 2002

38

Advertisement: Albert Ludwigs Universitat(top)/ELSEVIER(bottom)

Journal:

Journal of Crystal Growth

Year:

2002

File:

PDF, 2 KB

2002