![](/img/cover-not-exists.png)
Molecular beam epitaxy growth and characterization of InxGa1 − xAs (0.57 ⩽ x ⩽ 1) on GaAs using InAlAs graded buffer
S.M. Wang, C. Karlsson, N. Rorsman, M. Bergh, E. Olsson, T.G. Andersson, H. ZirathVolume:
175-176
Year:
1997
Language:
english
Pages:
6
DOI:
10.1016/s0022-0248(96)00892-5
File:
PDF, 412 KB
english, 1997