Volume 175-176; Issue part-P2

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Journal of Crystal Growth
Volume 175-176; Issue part-P2

Journal of Crystal Growth

Volume 175-176; Issue part-P2

1

Self-assembling InP quantum dots for red lasers

K. Eberl, A. Kurtenbach, M. Zundel, J.Y. Jin-Phillipp, F. Phillipp, A. Moritz, R. Wirth, A. Hangleiter

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 370 KB

english, 1997

2

Self-assembled structures of closely stacked InAs islands grown on GaAs by molecular beam epitaxy

Yoshiaki Nakata, Yoshihiro Sugiyama, Toshiro Futatsugi, Naoki Yokoyama

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 418 KB

english, 1997

3

Growth and characterization of self-organized InSb quantum dots and quantum dashes

T. Utzmeier, J. Tamayo, P.A. Postigo, R. García, F. Briones

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 359 KB

english, 1997

4

Modulated-beam studies of the layer-by-layer etching of GaAs(0 0 1) using AsBr3: identification of the reaction mechanism

J. Zhang, O.P. Naji, P. Steans, P. Tejedor, T. Kaneko, T.S. Jones, B.A. Joyce

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 324 KB

english, 1997

5

Patterned growth on GaAs (3 1 1)A substrates

Richard Nötzel, Johann Menniger, Manfred Ramsteiner, Achim Trampert, Hans-Peter Schönherr, Lutz Däweritz, Klaus H. Ploog

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 381 KB

english, 1997

6

Selective area etching of III–V semiconductors using TDMAAs and TDMASb in metalorganic molecular beam epitaxy chamber

K. Yamamoto, H. Asahi, T. Hayashi, K. Hidaka, S. Gonda

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 426 KB

english, 1997

7

Substrate temperature change in III–V molecular beam epitaxy

K.R. Evans, J.E. Ehret, C.R. Jones, R. Kaspi

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 330 KB

english, 1997

8

Overgrowth of InGaAs quantum dots formed by alternating molecular beam epitaxy

Richard P. Mirin, James P. Ibbetson, John E. Bowers, Arthur C. Gossard

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 457 KB

english, 1997

9

MBE growth of high-quality InP for GaInAsInP heterostructures using incongruent evaporation of GaP

H. Künzel, J. Böttcher, P. Harde, R. Maessen

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 351 KB

english, 1997

10

Resonant tunnelling of holes in double barrier heterostructures grown by MBE on (1 1 0) oriented GaAs substrates

M. Henini, R.K. Hayden, T. Takamasu, N. Miura, L. Eaves, G. Hill

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 358 KB

english, 1997

11

Vertically stacked quantum wires fabricated by an in situ processing technique

M. López-López, Tomonori Ishikawa

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 304 KB

english, 1997

12

MOMBE growth of highly tensile-strained InGaAsP MQWs and their applications to 1.3-μm wavelength low threshold current lasers

H. Sugiura, M. Ogasawara, M. Mitsuhara, N. Yamamoto, M. Itoh

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 408 KB

english, 1997

13

Molecular beam epitaxy growth and characterization of InxGa1 − xAs (0.57 ⩽ x ⩽ 1) on GaAs using InAlAs graded buffer

S.M. Wang, C. Karlsson, N. Rorsman, M. Bergh, E. Olsson, T.G. Andersson, H. Zirath

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 412 KB

english, 1997

14

The building up of terrace periodicity by MBE growth on (0 0 1) GaAs vicinal surfaces

F. Lelarge, Z.Z. Wang, A. Cavanna, F. Laruelle, B. Etienne

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 416 KB

english, 1997

15

MBE growth of PbSe/CaF2/Si(1 1 1) heterostructures

P.J. McCann, X.M. Fang, W.K. Liu, B.N. Strecker, M.B. Santos

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 403 KB

english, 1997

16

Stranski-Krastanov growth of InSb, GaSb, and AlSb on GaAs: structure of the wetting layers

B.R. Bennett, B.V. Shanabrook, P.M. Thibado, L.J. Whitman, R. Magno

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 361 KB

english, 1997

17

Buffer-dependent mobility and morphology of InAs(Al,Ga)Sb quantum wells

M. Thomas, H.-R. Blank, K.C. Wong, H. Kroemer

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 301 KB

english, 1997

18

Investigation of Si-doped p-type AlGaAsGaAs, AlGaAsInGaAs quantum well infrared photodetectors and multiquantum wells grown on (3 1 1)A GaAs

Albert Chin, C.C. Liao, J. Chu, S.S. Li

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 295 KB

english, 1997

19

Growth parameter dependence of step patterns in AlGaAs molecular beam epitaxy on vicinal GaAs(1 1 0) inclined toward (1 1 1)A

Shigehiko Hasegawa, Kazuki Sato, Satoshi Torii, Hisao Nakashima

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 406 KB

english, 1997

20

Effects of tensile strain and substrate off-orientation on the growth of GaInAsInP multiple quantum well structures by CBE

T. Marschner, R.T.H. Rongen, M.R. Leys, F.D. Tichelaar, H. Vonk, J.H. Wolter

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 434 KB

english, 1997

21

Photoluminescence and X-ray characterization of relaxed Si1 − xGex alloys grown on silicon on insulator (SOI) and implanted SOI substrates

Michael A. Chu, Martin O. Tanner, Fengyi Huang, Kang L. Wang, Gordon G. Chu, Mark S. Goorsky

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 414 KB

english, 1997

22

MBE growth of Si-doped InAlAsSb layers lattice-matched with InAs

Makoto Kudo, Tomoyoshi Mishima

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 329 KB

english, 1997

23

New semiconductors TlInGaP and their gas source MBE growth

H. Asahi, M. Fushida, K. Yamamoto, K. Iwata, H. Koh, K. Asami, S. Gonda, K. Oe

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 314 KB

english, 1997

24

(GaMn)As: GaAs-based III–V diluted magnetic semiconductors grown by molecular beam epitaxy

T. Hayashi, M. Tanaka, T. Nishinaga, H. Shimada, H. Tsuchiya, Y. Otuka

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 401 KB

english, 1997

25

Multispectral InGaAs/GaAs/AlGaAs laser arrays by MBE growth on patterned substrates

K. Kamath, P. Bhattacharya, J. Singh

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 353 KB

english, 1997

26

Full gaseous source growth of separate confinement MQW 1.55 μm laser structures in a production MOMBE

M. Popp, H. Heinecke, H. Baumeister, E. Veuhoff

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 470 KB

english, 1997

27

Sb-surface segregation and the control of compositional abruptness at the GaAsSbGaAs interface

Ron Kaspi, Keith R. Evans

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 429 KB

english, 1997

28

New route to reduce ionized impurity scattering in modulation-doped GaAs quantum wells

R. Hey, K.-J. Friedland, H. Kostial, R. Klann, H.K. Ploog

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 376 KB

english, 1997

29

Molecular beam epitaxial growth of InGaAsInGaAsP quantum wires on V-grooved InP substrates with (1 1 1) sidewalls

J. Wang, D.A. Thompson, B.J. Robinson, J.G. Simmons

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 446 KB

english, 1997

30

Waveguide modulator structures with soft optical confinement grown by the epitaxial shadow mask (ESM) MBE-technique

S. Malzer, W. Geißelbrecht, U. Hilburger, M. Kneissl, P. Kiesel, R. Mayer, G.H. Döhler

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 288 KB

english, 1997

31

Growth and transformation of ultra-thin InAsInP layers obtained by chemical beam epitaxy

N. Lebouché-Girard, A. Rudra, E. Kapon

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 405 KB

english, 1997

32

Morphology of MBE grown InAs films studied by atomic force microscope

Y. Wang, Y.N. Sheng, Weikun Ge, Jiannong Wang, L.L. Chang, Jie Xie, Jianxing Ma, Jianbin Xu

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 310 KB

english, 1997

33

Transient surface states during the CBE growth of GaAs

T. Farrell, D. Hill, T.B. Joyce, T.J. Bullough, P. Weightman

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 404 KB

english, 1997

34

Formation of multi-atomic steps and novel n-AlGaAsGaAs heterojunctions on vicinal (1 1 1)B substrates by MBE and anisotropic transport of 2D electrons

Y. Nakamura, S. Koshiba, H. Sakaki

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 355 KB

english, 1997

35

MBE growth of two-dimensional electron gases on (110) GaAs

C.B. Sørensen, H. Gislason, J.M. Hvam

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 354 KB

english, 1997

36

Epitaxy of (Ga, Mn)As, a new diluted magnetic semiconductor based on GaAs

A. Shen, H. Ohno, F. Matsukura, Y. Sugawara, N. Akiba, T. Kuroiwa, A. Oiwa, A. Endo, S. Katsumoto, Y. Iye

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 383 KB

english, 1997

37

Photoluminescence investigation of p-type Si-doped AlGaAs grown by molecular beam epitaxy on (1 1 1)A, (2 1 1)A and (3 1 1)A GaAs surfaces

M. Henini, N. Galbiati, E. Grilli, M. Guzzi, L. Pavesi

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 418 KB

english, 1997

38

MBE growth and characterization of high-quality GaInAsSbAlGaAsSb strained multiple quantum well structures

A.Z. Li, Y. Zhao, Y.L. Zheng, G.T. Chen, G.P. Ru, W.Z. Shen, J.Q. Zhong

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 298 KB

english, 1997

39

MBE growth of GaInAsSb p/n junction diodes for thermophotovoltaic applications

Parvez N. Uppal, Greg Charache, Paul Baldasaro, Brian Campbell, Stephen Loughin, Stefan Svensson, David Gill

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 382 KB

english, 1997

40

Molecular-beam-epitaxial growth of Ga1−xInxSb on GaAs substrates

J.H. Roslund, O. Zsebők, G. Swenson, T.G. Andersson

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 343 KB

english, 1997

41

Improved nucleation and spiral growth of PbTe on BaF2(1 1 1)

A.Y. Ueta, G. Springholz, G. Bauer

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 401 KB

english, 1997

42

Photoluminescence study of SiSiGe multiple quantum wells grown by MBE

D. Grützmacher, R. Hartmann, E. Müller, U. Gennser, A. Dommann

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 429 KB

english, 1997

43

Molecular beam epitaxy of strain-compensated InGaAsGaAsP quantum-well intersubband photodetectors

K. Bacher, S. Massie, M. Seaford

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 383 KB

english, 1997

44

Intersubband absorption from In0.26Ga0.74AsGaAs quantum dot superlattice

Dong Pan, Y.P. Zeng, J.M. Li, C.H. Zhang, M.Y. Kong, H.M. Wang, C.Y. Wang, J. Wu

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 311 KB

english, 1997

45

Low dark current AlGaInAsInP waveguide photodiodes using hybrid MBE and MOCVD growth

K. Nishikata, H. Shimizu, K. Hiraiwa, S. Yoshida, N. Yamanaka, M. Irikawa, A. Kasukawa

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 262 KB

english, 1997

46

GaAsAlAs resonant tunneling diodes with super-flat interfaces grown on (4 1 1)A GaAs substrates by MBE

K. Shinohara, K. Kasahara, S. Shimomura, A. Adachi, N. Sano, S. Hiyamizu

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 354 KB

english, 1997

47

Molecular beam epitaxy of Al0.48In0.52AsGa0.47In0.53As heterostructures on metamorphic AlxGayIn1 − x − yAs buffer layers

M. Haupt, K. Köhler, P. Ganser, S. Müller, W. Rothemund

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 319 KB

english, 1997

48

Improved electroabsorption properties in 1.3 μm MQW waveguide modulators by a modified doping profile

X.B. Mei, K.K. Loi, W.S.C. Chang, C.W. Tu

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 286 KB

english, 1997

49

Symmetric triangular-barrier optoelectronic switch (S-TOPS) by gas source MBE

H. Sakata, Y. Nagao, Y. Matsushima

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 381 KB

english, 1997

50

Chemical beam epitaxy growth of tensile-strained GaAsPGaAlAs quantum well heterostructures for laser application

J.Ch. Garcia, A. Lebkiri, A. Fily, Ph. Collot, J. Massies, M. Leroux

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 386 KB

english, 1997

51

808 nm high-power laser grown by MBE through the control of Be diffusion and use of superlattice

Donghai Zhu, Zhanguo Wang, Jiben Liang, Bo Xu, Zhanping Zhu, Jun Zhang, Qian Gong, Shengying Li

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 324 KB

english, 1997

52

Low-threshold injection lasers based on vertically coupled quantum dots

V.M. Ustinov, A.Yu. Egorov, A.R. Kovsh, A.E. Zhukov, M.V. Maximov, A.F. Tsatsul'nikov, N.Yu. Gordeev, S.V. Zaitsev, Yu.M. Shernyakov, N.A. Bert, P.S. Kop'ev, Zh.I. Alferov, N.N. Ledentsov, J. Böhrer,

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 475 KB

english, 1997

53

Growth of abrupt GaAsGe heterointerfaces by atomic hydrogen-assisted molecular beam epitaxy

Yoshitaka Okada, James S. Harris Jr., Atsushi Sutoh, Mitsuo Kawabe

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 400 KB

english, 1997

54

Lateral coupling of InP/GaInAsP/InP structures by selective area MOMBE

M. Wachter, U. Schöffel, M. Schier, H. Heinecke

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 659 KB

english, 1997

55

MBE growth of high-power InAsSbInAlAsSb quantum-well diode lasers emitting at 3.5 μm

G.W. Turner, M.J. Manfra, H.K. Choi, M.K. Connors

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 432 KB

english, 1997

56

InAsGaAs self-assembled quantum dots grown by ALMBE and MBE

A. Bosacchi, P. Frigeri, S. Franchi, P. Allegri, V. Avanzini

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 396 KB

english, 1997

57

Temperature-insensitive photoluminescence above 300 K in strained GaxIn1 − x As multiple quantum wire heterostructures

D.E. Wohlert, S.T. Chou, K.Y. Cheng

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 390 KB

english, 1997

58

Growth of GaInAsP quantum wire heterostructures using the strain-induced lateral-layer ordering process

A.M. Moy, A.C. Chen, K.Y. Cheng, L.J. Chou, K.C. Hsieh

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 399 KB

english, 1997

59

MBE growth and magnetotunnelling transport properties of a single GaAs/AlAs/GaAs barrier incorporating InAs quantum dots

M. Henini, I.E. Itskevich, T. Ihn, P. Moriarty, A. Nogaret, P.H. Beton, L. Eaves, P.C. Main, J.R. Middleton, J.S. Chauhan

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 353 KB

english, 1997

60

Full wafer optical characterisation of resonant tunnelling structures using photoluminescence excitation spectroscopy

P.D. Buckle, P. Dawson, M. Missous, W.S. Truscott

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 303 KB

english, 1997

61

Growth-mode-induced surface morphology and its relation to optical properties of GaAs single quantum wells

R. Hey, I. Gorbunova, M. Ramsteiner, M. Wassermeier, L. Däweritz, K.H. Ploog

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 345 KB

english, 1997

62

Photoluminescence of low-temperature AlGaAsGaAs multiple quantum wells

W. Feng, F. Chen, Q. Huang, J.M. Zhou

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 330 KB

english, 1997

63

In situ RHEED control of direct MBE growth of Ge quantum dots on Si (0 0 1)

V.A. Markov, A.I. Nikiforov, O.P. Pchelyakov

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 294 KB

english, 1997

64

MBE growth and characterization of doped multiple quantum well avalanche photodiodes

H.M. Menkara, R.N. Bicknell-Tassius, R. Benz II, C.J. Summers

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 409 KB

english, 1997

65

Molecular-beam epitaxy of self-assembled InAs quantum dots on non-(1 0 0) oriented GaAs

P.P. González-Borrero, E. Marega Jr., D.I. Lubyshev, E. Petitprez, P. Basmaji

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 412 KB

english, 1997

66

Scanning tunneling spectroscopy and first-principles investigation on GaAs(0 0 1)(2 × 6)-S surface formed by molecular beam epitaxy

Shiro Tsukamoto, Takahisa Ohno, Nobuyuki Koguchi

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 375 KB

english, 1997

67

Selective MBE growth of GaAs wire and dot structures using atomic hydrogens and their electronic properties

T. Noda, Y. Nagamune, Y. Ohno, S. Koshiba, H. Sakaki

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 370 KB

english, 1997

68

CBE of 1.55 μm (GaIn)(AsP) lasers for monolithic integration

A. Nutsch, B. Torabi, H. Kratzer, G. Tränkle, G. Weimann

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 306 KB

english, 1997

69

The growth of AlGaAsInGaAs quantum-well structures by molecular beam epitaxy: observation of critical interdependent effects utilizing the design of experiments approach

Robert N. Bicknell-Tassius, Kyeong Lee, April S. Brown, Georgianna Dagnall, Gary May

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 394 KB

english, 1997

70

Be redistribution in InGaAs and InP grown by gas source molecular beam epitaxy

Teruo Mozume, Kazuhiko Hosomi

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 496 KB

english, 1997

71

Increased size uniformity through vertical quantum dot columns

G.S. Solomon, S. Komarov, J.S. Harris Jr., Y. Yamamoto

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 379 KB

english, 1997

72

Contamination in molecular beam epitaxy: the role of arsenic drag effect

Z.R. Wasilewski, S.J. Rolfe, R.A. Wilson

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 671 KB

english, 1997

73

Molecular beam epitaxial growth of GaInSbBi for infrared detector applications

Q. Du, J. Alperin, W.I. Wang

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 253 KB

english, 1997

74

MBE growth of quaternary InGaAlAs layers in InGaAsInAlAs HBTs to improve device performance

T.R. Block, J. Cowles, L. Tran, M. Wojtowicz, A.K. Oki, D.C. Streit

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 417 KB

english, 1997

75

The growth and characterization of two new P-type compressively strained layer InGaAs/AlGaAs/GaAs quantum well infrared photodetectors for mid- and long-wavelength infrared detection

J. Chu, Sheng S. Li, Pin Ho

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 479 KB

english, 1997

76

GSMBE growth and characterization of InxGa1 − xAsInP strained-layer MQWs in a P-i-N Configuration

Xiaoliang Wang, Dianzhao Sun, Meiying Kong, Xun Hou, Yiping Zeng

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 328 KB

english, 1997

77

Incorporation of As2 in InAsxP1 − x and its application to InAsxP1 − xInP quantum well structures

M. Hopkinson, J.P.R. David

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 396 KB

english, 1997

78

Editorial Board

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 67 KB

english, 1997

79

Author index

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 1.53 MB

english, 1997

80

Subject index

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 162 KB

english, 1997

81

Room temperature luminescence from self-organized InxGa1 − xAsGaAs (0.35 < x < 0.45) quantum dots with high size uniformity

K. Kamath, P. Bhattacharya, J. Phillips

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 376 KB

english, 1997

82

Strain-balanced AlGaInAsInP heterostructures with up to 50 QWs by MBE

H. Hillmer, R. Lösch, W. Schlapp

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 390 KB

english, 1997

83

Gas-source molecular beam epitaxial growth of low threshold current 1.3 μm InAsPInGaAsP lasers

P. Thiagarajan, G.E. Giudice, H. Temkin, G.Y. Robinson

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 192 KB

english, 1997

84

MBE grown mid-infrared type-II quantum-well lasers

Chih-Hsiang Lin, S.J. Murry, D. Zhang, P.C. Chang, Yucai Zhou, S.S. Pei, J.I. Malin, C.L. Felix, J.R. Meyer, C.A. Hoffman, J.F. Pinto

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 342 KB

english, 1997

85

High-density GaAs(GaAs)2(AlAs)2 quantum wires naturally formed on (7 7 5)B-oriented GaAs substrates by molecular beam epitaxy

M. Higashiwaki, M. Yamamoto, S. Shimomura, A. Adachi, S. Hiyamizu

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 368 KB

english, 1997

86

Surface chemistry during metalorganic molecular beam epitaxy studied by pulsed molecular beam scattering

Masahiro Sasaki, Seikoh Yoshida

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 584 KB

english, 1997

87

Molecular beam epitaxy of vertically compact AlxGa1 − xAsGaAs laser-HEMT structures for monolithic integration

A. Gaymann, J. Schaub, W. Bronner, N. Grün, J. Hornung, K. Köhler

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 369 KB

english, 1997

88

Improved hole transport properties of highly strained In0.35Ga0.65As channel double-modulation-doped structures grown by MBE on GaAs

Makoto Kudo, Hidetoshi Matsumoto, Takuma Tanimoto, Tomoyoshi Mishima, Isao Ohbu

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 314 KB

english, 1997

89

Organized growth of GaAsAlAs lateral superlattices on vicinal surfaces: where are the limits?

F. Laruelle, F. Lelarge, Z.Z. Wang, T. Mélin, A. Cavanna, B. Etienne

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 321 KB

english, 1997

90

Large mismatch heteroepitaxy of InSb on Si(1 1 1) substrates using CaF2 buffer layers

W.K. Liu, X.M. Fang, J. Winesett, Weiluan Ma, Xuemei Zhang, M.B. Santos, P.J. McCann

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 490 KB

english, 1997

91

Indium antimonide doped with manganese grown by molecular beam epitaxy

D.L. Partin, J. Heremans, C.M. Thrush

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 427 KB

english, 1997

92

Indium surface segregation during chemical beam epitaxy of Ga1 − xInxAsGaAs and Ga1 − xInxPGaAs heterostructures

M. Mesrine, J. Massies, C. Deparis, N. Grandjean, E. Vanelle, M. Leroux

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 406 KB

english, 1997

93

MBE growth of novel GaAsn-AlGaAs field-effect transistor structures with embedded InAs quantum traps and their transport characteristics

G. Yusa, H. Sakaki

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 410 KB

english, 1997

94

Improved optical qualities of GaAsAl0.3Ga0.7As tilted T-shaped quantum wires fabricated by glancing-angle molecular beam epitaxy

N. Tomita, T. Kishi, K. Takekawa, K. Fujita, T. Watanabe, A. Adachi, S. Shimomura, S. Hiyamizu

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 347 KB

english, 1997

95

High temperature (Ga)InAsP/high band gap GaInAsP barriers 1.3 μm SL-MQW lasers grown by gas source MBE

Ph. Pagnod-Rossiaux, F. Gaborit, N. Tscherptner, L. Roux, C. Starck, B. Fernier

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 396 KB

english, 1997

96

Continuously graded buffers for InGaAsGaAs structures grown on GaAs

A. Bosacchi, A.C. De Riccardis, P. Frigeri, S. Franchi, C. Ferrari, S. Gennari, L. Lazzarini, L. Nasi, G. Salviati, A.V. Drigo, F. Romanato

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 546 KB

english, 1997

97

Growth temperature-dependent conduction-type inversion of C-doped InGaAs grown by chemical beam epitaxy

Jeong-Rae Ro, Sung-Bock Kim, Seong-Ju Park, El-Hang Lee

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 389 KB

english, 1997

98

Growth controlled fabrication and cathodoluminescence study of 3D confined GaAs volumes on non-planar patterned GaAs(0 0 1) substrates

A. Konkar, H.T. Lin, D.H. Rich, P. Chen, A. Madhukar

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 383 KB

english, 1997

99

Molecular beam epitaxial growth of high electron mobility InAsAlGaAsSb deep quantum well structures

Naohiro Kuze, Hiromasa Goto, Masahiro Matsui, Ichiro Shibasaki, Hiroyuki Sakaki

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 330 KB

english, 1997

100

Growth and characterization of In2Se3 epitaxial films by molecular beam epitaxy

Tamotsu Okamoto, Akira Yamada, Makoto Konagai

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 350 KB

english, 1997

101

Radiative decay in type-II GaP/AlP/GaP quantum wells

S. Nagao, K. Fujii, T. Fujimori, H. Gotoh, H. Ito, F. Minami

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 336 KB

english, 1997

102

Self-organized quantum dot structures in strained (GaP)n(InP)m short period superlattices grown on GaAs (N 1 1) by gas-source MBE

S.J. Kim, H. Asahi, M. Takemoto, K. Asami, J.H. Noh, S. Gonda

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 387 KB

english, 1997

103

Formation of self-organized In0.5Ga0.5As quantum dots on GaAs by molecular beam epitaxy

Jen-Inn Chyi, Tzer-En Nee, Ching-Ting Lee, Jia-Lin Shieh, Jen-Wei Pan

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 284 KB

english, 1997

104

Does scanning tunnelling microscopy provide a realistic picture of the step array of vicinal GaAs(0 0 1) surfaces grown at high temperature?

L Däweritz, H Nörenberg, P Schützendübe, K.H Ploog

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 516 KB

english, 1997

105

Microstructural properties of InAsInAsxSb1 − x superlattices and InAsxSb1 − x ordered alloys grown by modulated molecular beam epitaxy

Y.-H. Zhang, A. Lew, E. Yu, Y. Chen

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 299 KB

english, 1997

106

MBE growth of double-sided doped InAlAsInGaAs HEMTs with an InAs layer inserted in the channel

M. Sexl, G. Böhm, D. Xu, H. Heiß, S. Kraus, G. Tränkle, G. Weimann

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 298 KB

english, 1997

107

UHV-AFM study of MBE-grown 10 nm scale ridge quantum wires

S. Koshiba, Ichiro Tanaka, Y. Nakamura, I. Kamiya, T. Someya, T. Ngo, H. Sakaki

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 329 KB

english, 1997

108

Large array of GaAs modulators and detectors flip-chip solder bonded to silicon CMOS using InGaP as the selective etch stop for GaAs substrate removal

J.M. Kuo, Y.C. Wang, K.W. Goossen, L.M.F. Chirovsky, S.P. Hui, B.T. Tseng, J. Walker, A.L. Lentine, R.E. Leibenguth, G. Livescu, W.Y. Jan, J.E. Cunningham, L.A. D'Asaro, A. Ron, D. Dahringer, D. Kossi

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 364 KB

english, 1997

109

MBE growth and physics of strongly coupled p-type double quantum wells showing correlated v = 1 quantum Hall state

M. Henini, R.J. Hyndman, T. Ihn, B.L. Gallagher, T.J. Foster, J.S. Chauhan, J.R. Middleton

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 341 KB

english, 1997

110

Effects of strain on the growth and properties of CuInSe2 epitaxial films

S. Niki, P.J. Fons, H. Shibata, T. Kurafuji, A. Yamada, Y. Okada, H. Oyanagi, W.G. Bi, C.W. Tu

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 408 KB

english, 1997

111

Manipulating InAs island sizes with chemical beam epitaxy growth on GaAs patterns

Mark S. Miller, Lars Landin, Søren Jeppesen, Anders Petersson, Ivan Maximov, Bernhard Kowalski, Lars Samuelson

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 456 KB

english, 1997

112

Photoluminescence spectra of shadow masked multiple quantum wells

S. Sopitpan, P. Cheewatas, S. Thainoi, S. Ratanathammaphan, S. Panyakeow

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 320 KB

english, 1997

113

Photoluminescence characterization of MBE grown AlGaAs/InGaAs/GaAs pseudomorphic HEMTs

M. Wojtowicz, D. Pascua, A.-C. Han, T.R. Block, D.C. Streit

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 365 KB

english, 1997

114

Luminescence anomaly in band gap tailored In0.53(GaxAl1 − x)0.47As quaternary alloy grown by molecular beam epitaxy

A. Ramam, S.J. Chua

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 313 KB

english, 1997

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