1.4kV Double-Implanted MOSFETs Fabricated on 4H-SiC(000-1)

Materials Science Forum 2011 / 3 Vol. 679-680

1.4kV Double-Implanted MOSFETs Fabricated on 4H-SiC(000-1)

Kono, Hiroshi, Suzuki, Takuma, Takao, Kazuto, Furukawa, Masaru, Mizukami, Makoto, Ota, Chiharu, Harada, Shinsuke, Senzaki, Junji, Fukuda, Kenji, Shinohe, Takashi
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Volume:
679-680
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/msf.679-680.607
Date:
March, 2011
File:
PDF, 583 KB
english, 2011
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