Numerical Simulations of a 4H-SiC BMFET Power Transistor...

Materials Science Forum 2011 / 3 Vol. 679-680

Numerical Simulations of a 4H-SiC BMFET Power Transistor with Normally-Off Characteristics

Della Corte, F.G., Pezzimenti, F., Bellone, S., Nipoti, Roberta
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Volume:
679-680
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/msf.679-680.621
Date:
March, 2011
File:
PDF, 310 KB
english, 2011
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