High performance a-Si:H thin film transistors based on aluminum gate metallization
A Nathan, R.V.R Murthy, B Park, S.G ChamberlainVolume:
40
Year:
2000
Language:
english
Pages:
7
DOI:
10.1016/s0026-2714(00)00012-3
File:
PDF, 1.41 MB
english, 2000