Investigations of impact ionization phenomena in advanced...

Microelectronics Reliability 2001 Vol. 41; Iss. 2

Investigations of impact ionization phenomena in advanced transistors and speed-power improvement of BiMOS SRAM cells based on reverse base current effect

Alexander N Bubennikov, Andrey V Zykov
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Volume:
41
Year:
2001
Language:
english
Pages:
10
DOI:
10.1016/s0026-2714(00)00092-5
File:
PDF, 230 KB
english, 2001
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