Volume 41; Issue 2

Microelectronics Reliability

Volume 41; Issue 2

1

Semiconductor devices for RF applications: evolution and current status

F. Schwierz, J.J. Liou

Journal:

Microelectronics Reliability

Year:

2001

Language:

english

File:

PDF, 492 KB

english, 2001

2

Investigations of impact ionization phenomena in advanced transistors and speed-power improvement of BiMOS SRAM cells based on reverse base current effect

Alexander N Bubennikov, Andrey V Zykov

Journal:

Microelectronics Reliability

Year:

2001

Language:

english

File:

PDF, 230 KB

english, 2001

3

Comparing migratory resistive short formation abilities of conductor systems applied in advanced interconnection systems

Gábor Harsányi, George Inzelt

Journal:

Microelectronics Reliability

Year:

2001

Language:

english

File:

PDF, 498 KB

english, 2001

4

X-ray and UV controlled adjustment of MOS VLSI circuits threshold voltages

M.N Levin, V.R Gitlin, S.G Kadmensky, S.S Ostrouhov, V.S Pershenkov

Journal:

Microelectronics Reliability

Year:

2001

Language:

english

File:

PDF, 189 KB

english, 2001

5

Investigation of the surface silica layer on porous poly-Si thin films

H Wong, P.G Han, M.C Poon, Y Gao

Journal:

Microelectronics Reliability

Year:

2001

Language:

english

File:

PDF, 1.05 MB

english, 2001

6

Unifying the thermal–chemical and anode-hole-injection gate-oxide breakdown models

Journal:

Microelectronics Reliability

Year:

2001

Language:

english

File:

PDF, 242 KB

english, 2001

7

Design issues of a three-dimensional packaging scheme for power modules

Shatil Haque, Kalyan Siddabattula, Mike Craven, Sihua Wen, Xingsheng Liu, Dusan Boroyevich, Guo-Quan Lu

Journal:

Microelectronics Reliability

Year:

2001

Language:

english

File:

PDF, 641 KB

english, 2001

8

An investigation of the mechanical behavior of conductive elastomer interconnects

Jingsong Xie, Michael Pecht, David DeDonato, Ali Hassanzadeh

Journal:

Microelectronics Reliability

Year:

2001

Language:

english

File:

PDF, 397 KB

english, 2001

9

Study of micro-BGA solder joint reliability

P.L Tu, Y.C Chan, K.C Hung, J.K.L Lai

Journal:

Microelectronics Reliability

Year:

2001

Language:

english

File:

PDF, 297 KB

english, 2001

10

Characterisation of emitter/base leakage currents in SiGe HBTs produced using selective epitaxy

A.C Lamb, J.F.W Schiz, J.M Bonar, F Cristiano, P Ashburn, S Hall, P.L.F Hemment

Journal:

Microelectronics Reliability

Year:

2001

Language:

english

File:

PDF, 459 KB

english, 2001

11

A generalized model for the lifetime of microelectronic components, applied to storage conditions

Loren J Wise, Ronald D Schrimpf, Harold G Parks, Kenneth F Galloway

Journal:

Microelectronics Reliability

Year:

2001

Language:

english

File:

PDF, 227 KB

english, 2001

12

Module allocation with idle-time utilization for on-line testability

A.A. Ismaeel, R. Mathew, R. Bhatnagar

Journal:

Microelectronics Reliability

Year:

2001

Language:

english

File:

PDF, 216 KB

english, 2001

13

Investigation of deep traps in silicon–germanium epitaxial base bipolar transistors with a single polysilicon quasi self-aligned architecture

L Militaru, A Souifi, M Mouis, A Chantre, G Brémond

Journal:

Microelectronics Reliability

Year:

2001

Language:

english

File:

PDF, 613 KB

english, 2001

14

Low-frequency noise in single–poly bipolar transistors at low base current density

Nicolas Valdaperez, Jean-Marc Routoure, Daniel Bloyet, Regis Carin, Serge Bardy, Jacques Lebailly

Journal:

Microelectronics Reliability

Year:

2001

Language:

english

File:

PDF, 151 KB

english, 2001

15

A comparison of early stage hot carrier degradation behaviour in 5 and 3 V sub-micron low doped drain metal oxide semiconductor field effect transistors

M.M. De Souza, J. Wang, S. Manhas, E.M. Sankara Narayanan, A.S. Oates

Journal:

Microelectronics Reliability

Year:

2001

Language:

english

File:

PDF, 539 KB

english, 2001

16

Neutron-induced 10B fission as a major source of soft errors in high density SRAMs

Robert C. Baumann, Eric B. Smith

Journal:

Microelectronics Reliability

Year:

2001

Language:

english

File:

PDF, 321 KB

english, 2001

17

Analysis of the gate capacitance measurement technique and its application for the evaluation of hot-carrier degradation in submicrometer MOSFETs

C.T Hsu, M.M Lau, Y.T Yeow

Journal:

Microelectronics Reliability

Year:

2001

Language:

english

File:

PDF, 390 KB

english, 2001

18

Reliability aspects of thermal micro-structures implemented on industrial 0.8 μm CMOS chips

L.Y Sheng, C De Tandt, W Ranson, R Vounckx

Journal:

Microelectronics Reliability

Year:

2001

Language:

english

File:

PDF, 783 KB

english, 2001

19

Improved estimation of the resistivity of pure copper and electrical determination of thin copper film dimensions

Constance E. Schuster, Mark G. Vangel, Harry A. Schafft

Journal:

Microelectronics Reliability

Year:

2001

Language:

english

File:

PDF, 190 KB

english, 2001

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