On the InGaP/InxGa1−xAs pseudomorphic high...

Microelectronics Reliability 2001 Vol. 41; Iss. 11

On the InGaP/InxGa1−xAs pseudomorphic high electron-mobility transistors for high-temperature operations

Kun-Wei Lin, Kuo-Hui Yu, Wen-Lung Chang, Chih-Kai Wang, Wen-Huei Chiou, Wen-Chau Liu
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Volume:
41
Year:
2001
Language:
english
Pages:
6
DOI:
10.1016/s0026-2714(01)00093-2
File:
PDF, 266 KB
english, 2001
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