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Application of forward gated-diode R–G current method in extracting F–N stress-induced interface traps in SOI NMOSFETs
Jin He, Xing Zhang, Ru Huang, Yang-yuan WangVolume:
42
Year:
2002
Language:
english
Pages:
4
DOI:
10.1016/s0026-2714(01)00122-6
File:
PDF, 166 KB
english, 2002