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A thorough investigation of hot-carrier-induced gate oxide breakdown in partially depleted N- and P-channel SIMOX MOSFETs
Hongxia Liu, Yue Hao, Jiangang ZhuVolume:
42
Year:
2002
Language:
english
Pages:
8
DOI:
10.1016/s0026-2714(02)00070-7
File:
PDF, 469 KB
english, 2002