Dependence of gate oxide breakdown on initial charge...

Microelectronics Reliability 1998 Vol. 38; Iss. 6-8

Dependence of gate oxide breakdown on initial charge trapping under Fowler-Nordheim injection

A. Martin, R. Duane, P. O'Sullivan, A. Mathewson
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Volume:
38
Year:
1998
Language:
english
Pages:
6
DOI:
10.1016/s0026-2714(98)00138-3
File:
PDF, 435 KB
english, 1998
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