Volume 38; Issue 6-8

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Microelectronics Reliability
Volume 38; Issue 6-8

Microelectronics Reliability

Volume 38; Issue 6-8

1

A new test method for contactless quantitative current measurement via scanning magneto-resistive probe microscopy

S. Bae, A. Schlensog, W. Mertin, E. Kubalek, M. Maywald

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 462 KB

english, 1998

2

Circuit internal logic analysis with electric force microscope- (EFM-) testing

J. Bangert, E. Kubalek

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 451 KB

english, 1998

3

Early signatures for REDR-based laser degradations

A. Bonfiglio, M.B. Casu, M. Vanzi, R. De Palo, F. Magistrali, G. Salmini

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 408 KB

english, 1998

4

The effect of hot electron current density on nMOSFET reliability

O. Buiu, S. Taylor, I.S. Al-Kofahi, C. Beech

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 350 KB

english, 1998

5

Application of layout overlay for failure analysis

C. Burmer, S. Görlich, S. Pauthner

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 382 KB

english, 1998

6

Comparison between field reliability and new prediction methodology on avionics embedded electronics

P. Charpenel, P. Cavernes, V. Casanovas, J. Borowski, J.M. Chopin

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 298 KB

english, 1998

7

Thermomechanical deformation imaging of power devices by electronic speckle pattern interferometry (ESPI)

K. Nassim, L. Joannes, A. Cornet, S. Dilhaire, E. Schaub, W. Claeys

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 456 KB

english, 1998

8

Measurement of the thermomechanical behaviour of the solder-lead interface in solder joints by laser probing : a new method for measuring the bond quality

S. Dilhaire, A. Cornet, C. Rauzan, W. Claeys, E. Schaub

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 292 KB

english, 1998

9

On the effect of power cycling stress on IGBT modules

P. Cova, F. Fantini

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 485 KB

english, 1998

10

Scanning near-field optical microscopy analyses of electronic devices

R.M. Cramer, W.R. Schade, R. Heiderhoffo, L.J. Balk, R. Chin

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 472 KB

english, 1998

11

The time of “guessing” your failure time distribution is over!

K. Croes, J.V. Manca, W. De Ceuninck, L. De Schepper, G. Molenberghs

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 350 KB

english, 1998

12

Failure analysis of integrated devices by scanning thermal microscopy (SThM)

G.B.M. Fiege, V. Feige, J.C.H Phang, M. Maywald, S. Gorlich, L.J. Balk

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 362 KB

english, 1998

13

Recovery and stress dynamics in bipolar transistors and MOS devices

F. Ingvarson, L-Å. Ragnarsson, P. Lundgren

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 392 KB

english, 1998

14

Failure snalysis of wafer using backside OBIC method

Seigo Ito, Hideo Monma

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 381 KB

english, 1998

15

Experimental design and evaluation of interconnection materials for improvement of joint reliability at power transistors

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 234 KB

english, 1998

16

Some observation dealing with the failures of IGBT transistors in high power converters

S. Januszews, M. Kociszewska-Szezerbik, H. Świa̧tek

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 526 KB

english, 1998

17

Failure mechanisms of Schottky gate contact degradation and deep traps creation in AlGaAs/InGaAs PM-HEMTs submitted to accelerated life tests

G. Meneghesso, C. Crosato, F. Garat, G. Martines, A. Paccagnella, E. Zanoni

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 428 KB

english, 1998

18

A concept to relate wire bonding parameters to bondability and ball bond reliability

Z.N. Liang, F.G. Kuper, M.S. Chen

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 426 KB

english, 1998

19

Automatic fault tracing by successive circuit extraction from CAD layout data with the CAD-linked EB test system

K. Miura, K. Nakamae, H. Fujioka

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 478 KB

english, 1998

20

Gate bias stress in hydrogenated and unhydrogenated polysilicon thin film transistors

B. Tala-Ighil, H. Toutah, A. Rahal, K. Mourgues, L. Pichon, F. Raoult, O. Bonnaud, T. Mohammed-Brahim

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 359 KB

english, 1998

21

Near-field-optical-probe induced resistance-change-detection (NF-OBIRCH) method for identifying defects in Al and TiSi interconnects

K. Nikawa, T. Saiki, S. Inoue, M. Ohtsu

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 385 KB

english, 1998

22

A new experimental technique to evaluate the plasma induced damage at wafer level testing

L. Pantisano, A. Paccagnella, L. Pettarin, A. Scarpa, G. Valentini, L. Baldi, S. Alba

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 410 KB

english, 1998

23

Analysis of thermomechanical stresses in a 3D packaged micro electro mechanical system

C. Pellet, M. Lecouvé, H. Frémont, A. Val, D. Estève

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 299 KB

english, 1998

24

Junction delineation and EBIC on FIB cross section

G. Perez, F. Courtade, B. Benteo, J.-L. Gauffier, J.L. Kwang

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 437 KB

english, 1998

25

Mechanical stress evolution and the blech length: 2D simulation of early electromigration effects

V. Petrescu, A.J. Mouthaan, W. Schoenmaker, C. Salm

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 243 KB

english, 1998

26

Analysis of Iddq failures by spectral photon emission microscopy

M. Rams, I. De Wolf, H. Bender, G. Groeseneken, H.E. Maes, S. Vanhaeverbeke, P. De Pauw

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 500 KB

english, 1998

27

Reversibility of charge trapping and SILC creation in thin oxides after stress/anneal cycling

P. Riess, R. Kies, G. Ghibaudo, G. Pananakakis, J. Brini

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 327 KB

english, 1998

28

Modelling the field soft error rate of DRAMs by varying the critical cell charge

Horst Schleifer, Oskar Kowarik, Kurt Hoffmann, Werner Reczek

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 181 KB

english, 1998

29

Design of a low EMI susceptibility CMOS transimpedance operational amplifier

Gianluca Setti, Nicolò Speciale

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 407 KB

english, 1998

30

Effects of alloying elements on electromigration

R. Spolenak, O. Kraft, E. Arzt

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 449 KB

english, 1998

31

Hot carrier induced device degradation in RF-nMOSFET's

Jong Tae Park, Byung Jin Lee, Dong Wook Kim, Chong Gun Yu, Hyun Kyu Yu

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 260 KB

english, 1998

32

Precise quantitative evaluation of the hot-carrier induced drain series resistance degradation in LATID-n-MOSFETs

Georg H. Walter, Werner Weber, Ralf Brederlow, Reunhard Jurk, Carsten G. Linnenbank, Christian Schltinder, Doris Schmitt-Landsiedel, Roland Thewes

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 426 KB

english, 1998

33

Modelling and simulation of hot-carriers degradation of high voltage floating lateral NDMOS transistors

Eric Vandenbossche, Catherine De Keukeleire, Marc de Wolf, Hugo Van Hove, Johan Witters

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 338 KB

english, 1998

34

A study of NMOS behavior under ESD stress: simulation and characterization

Albert Z. Wang, Chen Tsay, Amit Lele, Peter Deane

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 215 KB

english, 1998

35

Cantilever influence suppression of contactless IC-testing by electric force microscopy

V. Wittpahl, U. Behnke, B. Wand, W. Mertin

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 427 KB

english, 1998

36

The dependence of stress induced voiding on line width studied by conventional and high resolution resistance measurements

A. Witvrouw, K. Maex, W. De Ceuninck, G. Lekens, J. D'Haen, L. De Schepper

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 374 KB

english, 1998

37

Reliability of nitrided wet silicon dioxide thin films in WSi2 or TaSi2 polycide process : influence of the nitridation temperature

K. Yckache, P. Boivin, F. Baiget, S. Radja, G. Auriel, B. Sagnes, J. Ouahd, A. Glachant

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 524 KB

english, 1998

38

Degradation of performance in MESFETs and HEMTs: simulation and measurement of reliability

Ting Feng, N. Strifas, A. Christou

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 405 KB

english, 1998

39

A study of soldering heat evaluation for SMDs

Yoshihiro Etoh, Tatsuo Kayama, Kenji Sasaki

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 403 KB

english, 1998

40

Use of wafer maps in integrated circuit manufacturing

C.K. Hansen, P. Thyregod

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 762 KB

english, 1998

41

Study of degradation mechanisms in compound semiconductor based devices by SEM-cathodoluminescence

G. Salviati, C. Zanotti-Fregonara, M. Borgarino, L. Lazzarini, L. Cattani, P. Cova, M. Mazzer

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 1.12 MB

english, 1998

42

Field failure analysis on transmission data equipment due to lightning discharges

E. Mino Diaz, J.E. Vila Aresté

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 357 KB

english, 1998

43

Materials interfaces in flip chip interconnects for optical components; performance and degradation mechanisms

Robert H. Esser, A. Dimoulas, N. Strifas, A. Christou, N. Papanicolau

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 436 KB

english, 1998

44

On-chip reliability investigations on power modules actually working in inverter systems

T. Frank, M. Honsberg-Riedl, P. Simon, J. Otto, S. Ramminger, G. Soelkner, E. Wolfgang

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 484 KB

english, 1998

45

Strain depending reliability of automotive diodes

L. Galateanu, M.G. Stoica, E. Popa

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 299 KB

english, 1998

46

Temperature measurements and thermal modeling of high power IGBT multichip modules for reliability investigations in traction applications

A. Hamidi, G. Coquery, R. Lallemand, P. Vales, J.M. Dorkel

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 606 KB

english, 1998

47

Induced damages on CMOS and bipolar integrated structures under focused ion beam irradiation

J. Benbrik, P. Perdu, B. Benteo, R. Desplats, N. Labat, A. Touboul, Y. Danto

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 294 KB

english, 1998

48

A new hot carrier degradation law for MOSFET lifetime prediction

B. Marchand, G. Ghibaudo, F. Balestra, G. Guégan, S. Deleonibus

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 287 KB

english, 1998

49

Dependence of gate oxide breakdown on initial charge trapping under Fowler-Nordheim injection

A. Martin, R. Duane, P. O'Sullivan, A. Mathewson

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 435 KB

english, 1998

50

Investigation of the intrinsic SiO2 area dependence using TDDB testing and model integration into the design process

James Prendergast, Nigel Foley, John S. Suehle

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 354 KB

english, 1998

51

Crack mechanism in wire bonding joints

S. Ramminger, P. Türkes, G. Wachutka

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 465 KB

english, 1998

52

Two-step stress method for the dynamic testing of very thin (8 nm) SiO2 films

R. Rodríguez, E. Miranda, M. Nafría, J. Suñé, X. Aymerich

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 376 KB

english, 1998

53

Degradation behavior in InGaAs/GaAs strained-quantum well lasers

Tatsuya Takeshita, Mitsuru Sugo, Teruhiko Nishiya, Ryuzou Iga, Mitsuo Fukuda, Yoshio Itaya

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 207 KB

english, 1998

54

Systematic derivation of latchup design rules for submicron CMOS processes from test structures

J.A. van der Pol, P.B.M. Wolbert

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 494 KB

english, 1998

55

Structures for piezoresistive measurement of package induced stress in transfer molded silicon pressure sensors

J.B. Nysæther, A. Larsen, B. Liverød, P. Ohlckers

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 473 KB

english, 1998

56

Detailed investigation of SEM-results by TEM at one sample using FIB-technique

U. Mühle, A. Wiesner, S. Schray

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 476 KB

english, 1998

57

ESD protection methodology for deep-sub-micron CMOS

K. Bock, G. Groeseneken, H.E. Maes

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 1.16 MB

english, 1998

58

Reliability of industrial packaging for microsystems

R. de Reus, C. Christensen, S. Weichel, S. Bouwstra, J. Janting, G. Friis Eriksen, K. Dyrbye, T. Romedahl Brown, J.P. Krog, O. Søndergård Jensen, P. Gravesen

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 962 KB

english, 1998

59

Advanced IGBT modules for railway traction applications: Reliability testing

H. Berg, E. Wolfgang

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 369 KB

english, 1998

60

Extrapolation of cosmic ray induced failures from test to field conditions for IGBT modules

C. Findeisen, E. Herr, M. Schenkel, R. Schlegel, H.R. Zeller

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 404 KB

english, 1998

61

Full-chip reliability analysis

David Overhauser, J.R. Lloyd, Steffen Rochel, Gregory Steele, Syed Zakir Hussain

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 729 KB

english, 1998

62

Editorial

Claus Kjåergaard, Finn Jensen

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 61 KB

english, 1998

63

Author index

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 117 KB

english, 1998

64

Pulsed current stress of Berillium doped AlGaAs/GaAs HBTs

L. Cattani, M. Borgarino, F. Fantinia

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 486 KB

english, 1998

65

A new adaptive amplifier for biased electron beam induced current applications

M. Ciappa, P. Malberti, P. Furcas, M. Vanzi

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 392 KB

english, 1998

66

Improved reliability of bistable circuits by selective hot-carrier stress reduction

A.G.M. Das, S. Johnson

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 521 KB

english, 1998

67

Characterization of SILO in thin-oxides by using MOSFET substrate current

B. De Salvo, G. Ghibaudo, G. Pananakakis, F. Mondon

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 303 KB

english, 1998

68

Extended noise analysis — a novel tool for reliability screening

Gisela Härtler, Ute Golze, Katrin Paschke

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 375 KB

english, 1998

69

A new method for temperature mapping on GaAs field effect transistors

E. Martin, J.P. Landesman, P. Braun, A. Fily

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 451 KB

english, 1998

70

Electrical characterization and modification of a microelectroMechanical system (MEMS) for extended mechanical reliability and fatigue testing

D. Meunier, R. Desplats, J. Benbrik, G. Perez, C. Pellet, D. Etsève, B. Benteo

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 340 KB

english, 1998

71

Coupling technology impact on low-cost laser modules performances and reliability

Marie Morin, Jean-Pierre Defars, Pascal Devoldére

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 429 KB

english, 1998

72

Overview of the kinetics of the early stages of electromigration under low (= realistic) current density stress

J. Van Olmen, J.V. Manca, W. De Ceuninck, L. De Schepper, V. D'Haeger, A. Witvrouw, K. Maex

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 375 KB

english, 1998

73

Temperature dependence of snap-back breakdown up to 300°C analyzed using circuit level model and simulation

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 452 KB

english, 1998

74

Low frequency noise analysis as a diagnostic tool to assess the quality of 0.25μm Ti-silicided poly lines

E.P. Vandamme, I. De Wolf, A. Lauwers, L.K.J. Vandamme

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 381 KB

english, 1998

75

Lateral interface effect on pulsed DC electromigration analysis

P. Waltz, L. Arnaud, G. Lormand, G. Tartavel

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 418 KB

english, 1998

76

A comparison between normally and highly accelerated electromigration tests

S. Foley, A. Scorzoni, R. Balboni, M. Impronta, I. De Munari, A. Mathewson, F. Fantini

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 495 KB

english, 1998

77

Electromigration failure modes in damascene copper interconnects

L. Arnaud, R. Gonella, G. Tartavel, J. Torrès, C. Gounelle, Y. Gobil, Y. Morand

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 479 KB

english, 1998

78

The use of the focused ion beam in failure analysis

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 538 KB

english, 1998

79

Electronic systems packaging: future reliability challenges

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 919 KB

english, 1998

80

Direct observation of local strain field for ULSI devices

N. Hashikawa, K. Fukumoto, T. Kuroi, M. Ikeno, Y. Mashiko

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 510 KB

english, 1998

81

Electrical parameters degradation law of MOSFET during ageing

Ch. Mourrain, Ch. Tourniol, M.J. Bouzid

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 346 KB

english, 1998

82

Hot carrier degradation mechanisms in sub-micron p channel MOSFETs: Impact on low frequency (1/f) noise behaviour

E. Sheehan, P.K. Hurley, A. Mathewson

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 357 KB

english, 1998

83

An analysis of the quality and reliability supplement to the SIA Roadmap

Robert W. Thomas

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 529 KB

english, 1998

84

Assembly and analysis of quantum devices using SPM based methods

Lars Montelius, T. Junno, S.-B. Carlsson, M.H. Magnusson, K. Deppert, H. Xu, L. Samuelson

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 615 KB

english, 1998

85

On-wafer heating tests to study stability of silicon devices

D. Manic, Y. Haddab, R.S. Popovic

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 481 KB

english, 1998

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