Optical characterization of ion implantation in Si and...

Microelectronics Reliability 1999 Vol. 39; Iss. 2

Optical characterization of ion implantation in Si and Si/SiO2 structures: spectroellipsometric (SE) and second harmonic generation (SHG) results

O. Buiu, S. Taylor, L. Culiuc, M. Gartner, I. Cernica
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Volume:
39
Year:
1999
Language:
english
Pages:
5
DOI:
10.1016/s0026-2714(98)00234-0
File:
PDF, 275 KB
english, 1999
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