Volume 39; Issue 2

Microelectronics Reliability

Volume 39; Issue 2

1

Stress-induced leakage current in very thin dielectric layers: some limitations to reliability extrapolation modeling

S. Bruyre, E. Vincent, G. Ghibaudo

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 198 KB

english, 1999

2

Dielectric and ferroelectric properties of Perovskite Pb(Zr, Ti)O3 films deposited by sputtering on Si substrate

G. Vélu, G. Rèmiens

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 297 KB

english, 1999

3

Optical dispersion analysis within the IR range of thermally grown and TEOS deposited SiO2 films

Dimitris Davazoglou, Vassilis Em. Vamvakas

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 155 KB

english, 1999

4

Comparison between the properties of amorphous and crystalline Ta2O5 thin films deposited on Si

C. Chaneliere, S. Four, J.L. Autran, R.A.B. Devine

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 485 KB

english, 1999

5

Analysis of space and energy distribution of stress-induced oxide traps

A.S. Spinelli, A.L. Lacaita, D. Minelli, G. Ghidini

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 197 KB

english, 1999

6

Switching events in the soft breakdown I–t characteristic of ultra-thin SiO2 layers

E Miranda, J Suñé, R Rodrı́guez, M Nafrı́a, X Aymerich

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 150 KB

english, 1999

7

Gate oxide reliability improvement related to dry local oxidation of silicon

P Bellutti, N Zorzi, G Verzellesi

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 457 KB

english, 1999

8

Measurement and modeling of the annealing kinetics of stress induced leakage current in ultra-thin oxides

P. Riess, G. Ghibaudo, G. Pananakakis, J. Brini

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 271 KB

english, 1999

9

High electrical resistivity of CVD-diamond

J.V Manca, M Nesladek, M Neelen, C Quaeyhaegens, L De Schepper, W De Ceuninck

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 249 KB

english, 1999

10

Characterization of oxide etching and wafer cleaning using vapor phase anhydrous hydrofluoric acid and ozone

A.J. Bauer, B. Froeschle, M. Beichele, H. Ryssel

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 874 KB

english, 1999

11

Editorial

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 44 KB

english, 1999

12

Thin stoichiometric silicon nitride prepared by r.f. reactive sputtering

F Qian, G Temmel, R Schnupp, H Ryssel

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 402 KB

english, 1999

13

Low pressure chemical vapor deposition from TEOS–NH3 mixtures: thermochemical study of the process considering kinetic data

C. Vahlas, V.Em. Vamvakas, D. Davazoglou

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 291 KB

english, 1999

14

Degradation of electron irradiated MOS capacitors

A. Candelori, A. Paccagnella, A. Scarpa, G. Ghidini, P.G. Fuochi

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 202 KB

english, 1999

15

On the correlation between SILC and hole fluence throughout the oxide

A. Scarpa, B. De Salvo, G. Ghibaudo, G. Pananakakis, A. Paccagnella, G. Ghidini

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 153 KB

english, 1999

16

Total dose dependence of radiation-induced leakage current in ultra-thin gate oxides

M. Ceschia, A. Paccagnella, A. Scarpa, A. Cester, G. Ghidini

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 239 KB

english, 1999

17

Optical characterization of ion implantation in Si and Si/SiO2 structures: spectroellipsometric (SE) and second harmonic generation (SHG) results

O. Buiu, S. Taylor, L. Culiuc, M. Gartner, I. Cernica

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 275 KB

english, 1999

18

A study of the interface states in MIS-structures with thin SiO2 and SiOxNy layers using deep level transient spectroscopy

R. Beyer, H. Burghardt, E. Thomas, R. Reich, D.R.T. Zahn, T. Geßner

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 224 KB

english, 1999

19

Electric breakdowns and breakdown mechanisms in ultra-thin silicon oxides

J.C Jackson, Ö Oralkan, D.J Dumin, G.A Brown

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 346 KB

english, 1999

20

Density functional theory applied to the calculation of dielectric constant of low-k materials

A. Courtot-Descharles, F. Pires, P. Paillet, J.L. Leray

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 222 KB

english, 1999

21

Breakdown properties of metal/NIDOS SiO2/silicon structures

P Temple-Boyer, F Olivié, E Scheid, G Sarrabayrouse, J.L Alay, J.R Morante

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 138 KB

english, 1999

22

Modelling methodology of silicon oxidation from quantum calculations to Monte Carlo level

A Estève, M Djafari Rouhani, D Estève

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 203 KB

english, 1999

23

Experimental study of the quasi-breakdown failure mechanism in 4.5 nm-thick SiO2 oxides

D. Goguenheim, A. Bravaix, D. Vuillaume, F. Mondon, Ph. Candelier, M. Jourdain, A. Meinertzhagen

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 362 KB

english, 1999

24

ONO and NO interpoly dielectric conduction mechanisms

B. De Salvo, G. Ghibaudo, G. Pananakakis, G. Reimbold

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 221 KB

english, 1999

25

On positive charge annihilation and stress-induced leakage current decrease

A Meinertzhagen, C Petit, M Jourdain, F Mondon, D Gogenheim

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 291 KB

english, 1999

26

Dielectric characterization of ferroelectric thin films deposited on silicon

C. Legrand, T. Haccart, G. Velu, D. Chambonnet, D. Remiens, L. Burgnies, F. Mehri, J.C. Carru

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 423 KB

english, 1999

27

MOCVD of ferroelectric thin films

C Schmidt, E.P Burte

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 144 KB

english, 1999

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