Threshold voltage model for deep-submicron fully depleted...

Microelectronics Reliability 1999 Vol. 39; Iss. 4

Threshold voltage model for deep-submicron fully depleted SOI MOSFETs with back gate substrate induced surface potential effects

Mohamed A Imam, Mohamed A Osman, Ashraf A Osman
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Volume:
39
Year:
1999
Language:
english
Pages:
9
DOI:
10.1016/s0026-2714(99)00012-8
File:
PDF, 206 KB
english, 1999
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