Single transistor technique for interface trap density measurement in irradiated MOS devices
V.S Pershenkov, S.V Cherepko, R.E Ivanov, A.V Shalnov, V.V AbramovVolume:
39
Year:
1999
Language:
english
Pages:
9
DOI:
10.1016/s0026-2714(99)00020-7
File:
PDF, 200 KB
english, 1999