Bipolar model extension for MOS transistors considering...

Microelectronics Reliability 1999 Vol. 39; Iss. 11

Bipolar model extension for MOS transistors considering gate coupling effects in the HBM ESD domain

Heinrich Wolf, Horst Gieser, Wolfgang Stadler
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Volume:
39
Year:
1999
Language:
english
Pages:
9
DOI:
10.1016/s0026-2714(99)00074-8
File:
PDF, 200 KB
english, 1999
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