Volume 39; Issue 11

Microelectronics Reliability

Volume 39; Issue 11

1

Preface

Steven H Voldman

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 80 KB

english, 1999

2

Investigations on the thermal behavior of interconnects under ESD transients using a simplified thermal RC network

Pascal Salome, Charles Leroux, Philippe Crevel, Jean Pierre Chante

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 269 KB

english, 1999

3

Bipolar model extension for MOS transistors considering gate coupling effects in the HBM ESD domain

Heinrich Wolf, Horst Gieser, Wolfgang Stadler

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 200 KB

english, 1999

4

Characterization and optimization of a bipolar ESD-device by measurements and simulations

Andreas D. Stricker, Stephan Mettler, Heinrich Wolf, Markus Mergens, Wolfgang Wilkening, Horst Gieser, Wolfgang Fichtner

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 423 KB

english, 1999

5

Investigation into socketed CDM (SDM) tester parasitics

M Chaine, K Verhaege, L Avery, M Kelly, H Gieser, K Bock, L.G Henry, T Meuse, T Brodbeck, J Barth

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 278 KB

english, 1999

6

Electromigration induced aluminum atom migration retarding by grain boundary structure stabilization and copper doping

M Hasunuma, H Toyoda, H Kaneko

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 364 KB

english, 1999

7

The kinetics of the early stages of electromigration and concurrent temperature induced processes in thin film metallisations studied by means of an in-situ high resolution resistometric technique

J. Van Olmen, J.V. Manca, W. De Ceuninck, L. De Schepper, V. D’Haeger, A. Witvrouw, K. Maex, B. Vandevelde, E. Beyne, L. Tielemans

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 167 KB

english, 1999

8

Dynamics of electromigration induced void/hillock growth and precipitation/dissolution of addition elements studied by in-situ scanning electron microscopy resistance measurements

J. D’Haen, P. Cosemans, J.V. Manca, G. Lekens, T. Martens, W. De Ceuninck, M. D’Olieslaeger, L. De Schepper, K. Maex

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 370 KB

english, 1999

9

Modeling electromigration as a fluid–gas system

Wim Schoenmaker, Violeta Petrescu

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 235 KB

english, 1999

10

Electromigration performance of Al–Si–Cu filled vias with titanium glue layer

M Kageyama, K Hashimoto, H Onoda

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 296 KB

english, 1999

11

Modeling and microstructural characterization of incubation, time-dependent drift and saturation during electromigration in Al–Si–Cu stripes

A. Witvrouw, H. Bender, Ph. Roussel, K. Maex

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 377 KB

english, 1999

12

Guest Editorial

Ton J Mouthaan, Hiroshi Onoda

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 48 KB

english, 1999

13

Non-uniform triggering of gg-nMOSt investigated by combined emission microscopy and transmission line pulsing

Christian Russ, Karlheinz Bock, Mahmoud Rasras, Ingrid De Wolf, Guido Groeseneken, Herman E Maes

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 546 KB

english, 1999

14

ESD protection for mixed-voltage I/O using NMOS transistors stacked in a cascode configuration

Warren R. Anderson, David B. Krakauer

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 281 KB

english, 1999

15

Early electromigration effects and early resistance changes

A. Scorzoni, I. De Munari, M. Impronta, N. Kelaidis

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 226 KB

english, 1999

16

An evaluation of fast wafer level test methods for interconnect reliability control

S Foley, J Molyneaux, A Mathewson

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 271 KB

english, 1999

17

The excess noise in integrated circuit interconnects before and after electromigration damage

Jianping Guo, B.K Jones, G Trefan

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 238 KB

english, 1999

18

Long term noise measurements and median time to failure test for the characterization of electromigration in metal lines

C. Ciofi, V. Dattilo, B. Neri, S. Foley, A. Mathewson

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 153 KB

english, 1999

19

Copper metallization reliability

J.R Lloyd, J Clemens, R Snede

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 147 KB

english, 1999