Hot electron degradation effects in 0.14 μm...

Microelectronics Reliability 1999 Vol. 39; Iss. 12

Hot electron degradation effects in 0.14 μm AlInAs/GaInAs/InP HEMTs

M Nawaz, H Zirath, E Choumas, S.H.M Persson, A Jasik, W Strupinski
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Volume:
39
Year:
1999
Language:
english
Pages:
7
DOI:
10.1016/s0026-2714(99)00183-3
File:
PDF, 200 KB
english, 1999
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