Volume 39; Issue 12

Microelectronics Reliability

Volume 39; Issue 12

1

Guest Editorial

Fausto Fantini, J.J Liou, Mitsuo Fukuda

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 49 KB

english, 1999

2

DC and pulsed measurements of on-state breakdown voltage in GaAs MESFETs and InP-based HEMTs

Gaudenzio Meneghesso, Giovanni Massari, Dario Buttari, Andrea Bortoletto, Massimo Maretto, Enrico Zanoni

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 154 KB

english, 1999

3

Hot electron degradation effects in 0.14 μm AlInAs/GaInAs/InP HEMTs

M Nawaz, H Zirath, E Choumas, S.H.M Persson, A Jasik, W Strupinski

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 200 KB

english, 1999

4

A model for the channel noise of MESFETs including hot electron effects

L. Forbes, K.T. Yan, S.S. Taylor

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 289 KB

english, 1999

5

Degradation of d.c. parameters in enhancement mode WNx self-aligned gate GaAs MESFETs under high temperature stress

Jae Kyoung Mun, Jong Won Lim, Jae Jin Lee, Jeon Wook Yang

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 191 KB

english, 1999

6

Reliability investigation of InGaP/GaAs HBTs under current and temperature stress

A.A. Rezazadeh, S.A. Bashar, H. Sheng, F.A. Amin, A.H. Khalid, M. Sotoodeh, M.A. Crouch, L. Cattani, F. Fantini, J.J. Liou

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 249 KB

english, 1999

7

On the short and long term degradation of GaInP/GaAs heterojunction bipolar transistors

M. Borgarino, R. Plana, S. Delage, F. Fantini, J. Graffeuil

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 200 KB

english, 1999

8

InP/GaAs0.51Sb0.49/InP fully self-aligned double heterojunction bipolar transistors with a C-doped base: a preliminary reliability study

C.R. Bolognesi, N. Matine, X.G. Xu, G. Soerensen, S.P. Watkins

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 138 KB

english, 1999

9

Reliability issues in III–V compound semiconductor devices: optical devices and GaAs-based HBTs

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 573 KB

english, 1999

10

Degradation behavior of the active region and passive region in buried heterostructure (BH) distributed Bragg reflector (DBR) lasers

H. Mawatari, M. Fukuda, Y. Tohmori

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 115 KB

english, 1999

11

Index

Journal:

Microelectronics Reliability

Year:

1999

File:

PDF, 66 KB

1999

12

Reliability of compound semiconductor devices for space applications

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 444 KB

english, 1999

13

Reliability considerations of III-nitride microelectronic devices

Joachim Würfl, Vera Abrosimova, Jochen Hilsenbeck, Erich Nebauer, Walter Rieger, Günther Tränkle

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 308 KB

english, 1999

14

Threshold voltage shift in 0.1 μm self-aligned-gate GaAs MESFETs under bias stress and related degradation of ultra-high-speed digital ICs

Yoshino K. Fukai, Kimiyoshi Yamasaki, Kazumi Nishimura

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 184 KB

english, 1999

15

Reliability characteristics of GaAs and InP-based heterojunction bipolar transistors

Dimitris Pavlidis

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 145 KB

english, 1999

16

Effects of InGaP heteropassivation on reliability of GaAs HBTs

Chung-Kun Song, Pun-Jae Choi

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 219 KB

english, 1999

17

Sensitivity of multimode bidirectional optoelectronic modules to electrostatic discharges

H.C. Neitzert, A. Piccirillo

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 203 KB

english, 1999

18

Review of reliability issues of metal-semiconductor-metal and avalanche photodiode photonic detectors

Kevin F Brennan, Joe Haralson II, Joseph W Parks Jr, Ali Salem

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 192 KB

english, 1999

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