Second-layer polysilicon structures for gate end-around leakage-current compensation in bulk CMOS ICs
Douglas J Fouts, Gary R McKerrow, Gary K Lum, Sidney S Noe, Andrew S LambleyVolume:
40
Year:
2000
Language:
english
Pages:
9
DOI:
10.1016/s0026-2714(99)00338-8
File:
PDF, 541 KB
english, 2000