Simulation and optimization of strained Si1−xGex buried...

Solid-State Electronics 2000 Vol. 44; Iss. 7

Simulation and optimization of strained Si1−xGex buried channel p-MOSFETs

Zhonghai Shi, Xiangdong Chen, David Onsongo, Eduardo J Quinones, Sanjay K Banerjee
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Volume:
44
Year:
2000
Language:
english
Pages:
6
DOI:
10.1016/s0038-1101(00)00031-9
File:
PDF, 242 KB
english, 2000
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