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Volume 44; Issue 7
Main
Solid-State Electronics
Volume 44; Issue 7
Solid-State Electronics
Volume 44; Issue 7
1
Consequences of space dependence of effective mass in quantum wires
Elena Borovitskaya
,
Michael S Shur
Journal:
Solid-State Electronics
Year:
2000
Language:
english
File:
PDF, 113 KB
Your tags:
english, 2000
2
Novel diode-chain triggering SCR circuits for ESD protection
Sheng-Lyang Jang
,
Ming-Shung Gau
,
Jeng-Kuan Lin
Journal:
Solid-State Electronics
Year:
2000
Language:
english
File:
PDF, 531 KB
Your tags:
english, 2000
3
A non-local gate current and oxide trapping charge generation model for lightly doped drain and single-drain nMOSFETs
Sheng-Lyang Jang
,
Chorng-Jye Sheu
Journal:
Solid-State Electronics
Year:
2000
Language:
english
File:
PDF, 326 KB
Your tags:
english, 2000
4
Validation of the small-signal model of a forward-biased p–n junction diode
P.Ravi Kumar
,
Pratul Sharma
,
Mahesh B Patil
Journal:
Solid-State Electronics
Year:
2000
Language:
english
File:
PDF, 235 KB
Your tags:
english, 2000
5
Picosecond response of optical nonlinearity in a GaAs/AlGaAs asymmetric triple quantum well structure
H.S Ahn
,
N Sawaki
Journal:
Solid-State Electronics
Year:
2000
Language:
english
File:
PDF, 100 KB
Your tags:
english, 2000
6
Numerical simulation of small-signal microwave performance of 4H–SiC MESFET
Mingwei Huang
,
Isaak D. Mayergoyz
,
Neil Goldsman
Journal:
Solid-State Electronics
Year:
2000
Language:
english
File:
PDF, 494 KB
Your tags:
english, 2000
7
Simulation of GaN/AlGaN heterojunction bipolar transistors: part II – pnp structures
X.A Cao
,
J.M Van Hove
,
J.J Klaassen
,
C.J Polley
,
A.M Wowchak
,
P.P Chow
,
D.J King
,
A.P Zhang
,
G Dang
,
C Monier
,
S.J Pearton
,
F Ren
Journal:
Solid-State Electronics
Year:
2000
Language:
english
File:
PDF, 173 KB
Your tags:
english, 2000
8
Simulation of GaN/AlGaN heterojunction bipolar transistors: part I – npn structures
X.A Cao
,
J.M Van Hove
,
J.J Klaassen
,
C.J Polley
,
A.M Wowchak
,
P.P Chow
,
D.J King
,
A.P Zhang
,
G Dang
,
C Monier
,
S.J Pearton
,
F Ren
Journal:
Solid-State Electronics
Year:
2000
Language:
english
File:
PDF, 206 KB
Your tags:
english, 2000
9
Monolithic photoreceiver constructed with InGaP/GaAs/InGaP MSM photodetectors and conventional GaAs MESFETs
Ming-Sheng Doong
,
Day-Shan Liu
,
Ching-Ting Lee
Journal:
Solid-State Electronics
Year:
2000
Language:
english
File:
PDF, 249 KB
Your tags:
english, 2000
10
Simulation and optimization of strained Si1−xGex buried channel p-MOSFETs
Zhonghai Shi
,
Xiangdong Chen
,
David Onsongo
,
Eduardo J Quinones
,
Sanjay K Banerjee
Journal:
Solid-State Electronics
Year:
2000
Language:
english
File:
PDF, 242 KB
Your tags:
english, 2000
11
GaN/SiC heterojunction bipolar transistors
J.T Torvik
,
J.I Pankove
,
B.Van Zeghbroeck
Journal:
Solid-State Electronics
Year:
2000
Language:
english
File:
PDF, 178 KB
Your tags:
english, 2000
12
Analog performance and application of graded-channel fully depleted SOI MOSFETs
Marcelo Antonio Pavanello
,
João Antonio Martino
,
Vincent Dessard
,
Denis Flandre
Journal:
Solid-State Electronics
Year:
2000
Language:
english
File:
PDF, 203 KB
Your tags:
english, 2000
13
The current-position response of a-Si:H thin film position sensitive detector and the Rload, RTCO effects on it
K. Gnanvo
,
Z.Y. Wu
,
Anne Labouret
Journal:
Solid-State Electronics
Year:
2000
Language:
english
File:
PDF, 115 KB
Your tags:
english, 2000
14
Charge transport mechanisms in HgMnTe photodiodes with ion etched p–n junctions
L.A. Kosyachenko
,
I.M. Rarenko
,
Sun Weiguo
,
Lu Zheng Xiong
Journal:
Solid-State Electronics
Year:
2000
Language:
english
File:
PDF, 236 KB
Your tags:
english, 2000
15
A comparison between leakage currents in thin gate oxides subjected to X-ray radiation and electrical stress degradation
Byung Jin Cho
,
Sun Jung Kim
,
C.H Ling
,
Moon-Sig Joo
,
In-Seok Yeo
Journal:
Solid-State Electronics
Year:
2000
Language:
english
File:
PDF, 163 KB
Your tags:
english, 2000
16
Simulation of interference patterns in solid-state biprism devices
Björn A.M. Hansson
,
Nobuya Machida
,
Kazuhito Furuya
,
Lars-Erik Wernersson
,
Lars Samuelson
Journal:
Solid-State Electronics
Year:
2000
Language:
english
File:
PDF, 297 KB
Your tags:
english, 2000
17
Flicker noise in deep submicron nMOS transistors
N. Lukyanchikova
,
N. Garbar
,
M. Petrichuk
,
E. Simoen
,
C. Claeys
Journal:
Solid-State Electronics
Year:
2000
Language:
english
File:
PDF, 261 KB
Your tags:
english, 2000
18
Effect of thermal stability of GaN epi-layer on the Schottky diodes
K.N Lee
,
X.A Cao
,
C.R Abernathy
,
S.J Pearton
,
A.P Zhang
,
F Ren
,
R Hickman
,
J.M Van Hove
Journal:
Solid-State Electronics
Year:
2000
Language:
english
File:
PDF, 971 KB
Your tags:
english, 2000
19
Characterization and modeling of threshold voltage shift due to quantum mechanical effects in pMOSFET
Yutao Ma
,
Litian Liu
,
Zhiping Yu
,
Zhijian Li
Journal:
Solid-State Electronics
Year:
2000
Language:
english
File:
PDF, 292 KB
Your tags:
english, 2000
20
PREDICTMOS – a predictive compact model of small-geometry MOSFETs for circuit simulation and device scaling calculations
Alexander
,
Arno Kostka
Journal:
Solid-State Electronics
Year:
2000
Language:
english
File:
PDF, 401 KB
Your tags:
english, 2000
21
Hydrodynamic modeling of avalanche breakdown in a gate overvoltage protection structure
Martin Knaipp
,
Werner Kanert
,
Siegfried Selberherr
Journal:
Solid-State Electronics
Year:
2000
Language:
english
File:
PDF, 340 KB
Your tags:
english, 2000
22
Modelling of heterojunction acoustic charge transport devices
T. Edjeou
,
T. Gryba
,
V. Zhang
,
V. Sadaune
,
J.E. Lefebvre
Journal:
Solid-State Electronics
Year:
2000
Language:
english
File:
PDF, 418 KB
Your tags:
english, 2000
23
A local charge control technique to improve the forward bias safe operating area of LIGBT
S Hardikar
,
G Cao
,
Y Xu
,
M.M De Souza
,
E.M.Sankara Narayanan
Journal:
Solid-State Electronics
Year:
2000
Language:
english
File:
PDF, 357 KB
Your tags:
english, 2000
24
A simulation study on pseudomorphic high electron mobility transistors (pHEMT) fabricated using the GaInP/InGaAs material system
S.F. Yoon
,
Adele H.T. Kam
,
B.P. Gay
,
H.Q. Zheng
Journal:
Solid-State Electronics
Year:
2000
Language:
english
File:
PDF, 1.24 MB
Your tags:
english, 2000
25
Effects of ex situ annealing on electrical characteristics of p–n–p AlGaAs/InGaAsN/GaAs double heterojunction bipolar transistors
P.W Li
,
N.Y Li
,
H.Q Hou
Journal:
Solid-State Electronics
Year:
2000
Language:
english
File:
PDF, 186 KB
Your tags:
english, 2000
26
Fabrication and electrical characterization of 4H-SiC p+–n–n+ diodes with low differential resistance
K Vassilevski
,
K Zekentes
,
G Constantinidis
,
A Strel'chuk
Journal:
Solid-State Electronics
Year:
2000
Language:
english
File:
PDF, 290 KB
Your tags:
english, 2000
27
A novel channel resistance ratio method for effective channel length and series resistance extraction in MOSFETs
Guofu Niu
,
Suraj J Mathew
,
John D Cressler
,
Seshu Subbanna
Journal:
Solid-State Electronics
Year:
2000
Language:
english
File:
PDF, 120 KB
Your tags:
english, 2000
28
Analytical modeling of pnp InP/InGaAs heterojunction bipolar transistors
S Datta
,
K.P Roenker
,
M.M Cahay
,
L.M Lunardi
Journal:
Solid-State Electronics
Year:
2000
Language:
english
File:
PDF, 77 KB
Your tags:
english, 2000
29
Low resistivity ohmic titanium carbide contacts to n- and p-type 4H-silicon carbide
S.-K Lee
,
C.-M Zetterling
,
M Östling
,
J.-P Palmquist
,
H Högberg
,
U Jansson
Journal:
Solid-State Electronics
Year:
2000
Language:
english
File:
PDF, 517 KB
Your tags:
english, 2000
30
Low temperature microcrystalline silicon thin film resistors on glass substrates
Anand T. Krishnan
,
Sanghoon Bae
,
Stephen J. Fonash
Journal:
Solid-State Electronics
Year:
2000
Language:
english
File:
PDF, 208 KB
Your tags:
english, 2000
31
Forward turn-on and reverse blocking characteristics of GaN Schottky and p-i-n rectifiers
A.P Zhang
,
G Dang
,
F Ren
,
J Han
,
H Cho
,
S.J Pearton
,
J.-I Chyi
,
T.-E Nee
,
C.M Lee
,
C.C Chuo
,
S.N.G Chu
Journal:
Solid-State Electronics
Year:
2000
Language:
english
File:
PDF, 427 KB
Your tags:
english, 2000
32
Erratum to “Room temperature annealing of 5.48 MeV He induced defect in p+ n and n+ p grown by metal–organic chemical vapour deposition” [Solid-State Electronics Volume 44(4) 639–648]
Aurangzeb Khan
Journal:
Solid-State Electronics
Year:
2000
File:
PDF, 26 KB
Your tags:
2000
33
Avalanche injection of hot holes in the gate oxide of LDMOS transistors
S Manzini
,
A Gallerano
Journal:
Solid-State Electronics
Year:
2000
Language:
english
File:
PDF, 228 KB
Your tags:
english, 2000
34
Amorphous/crystalline silicon two terminal photodetector
Mario Tucci
,
Rosario DeRosa
Journal:
Solid-State Electronics
Year:
2000
Language:
english
File:
PDF, 231 KB
Your tags:
english, 2000
35
Behavior of the drain leakage current in metal-induced laterally crystallized thin film transistors
Gururaj A Bhat
,
Hoi S Kwok
,
Man Wong
Journal:
Solid-State Electronics
Year:
2000
Language:
english
File:
PDF, 436 KB
Your tags:
english, 2000
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