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On the use of appropriate boundary conditions to calculate the normalized wave functions in the inversion layers of MOSFETs with ultra-thin gate oxides
A. Haque, A. Rahman, I.B. ChowdhuryVolume:
44
Year:
2000
Language:
english
Pages:
4
DOI:
10.1016/s0038-1101(00)00115-5
File:
PDF, 76 KB
english, 2000