Volume 44; Issue 10

Solid-State Electronics

Volume 44; Issue 10
2

Improved ohmic contact on n-type 4H-SiC

Year:
2000
Language:
english
File:
PDF, 286 KB
english, 2000
4

Effects of high current conduction in sub-micron Ti-silicided films

Year:
2000
Language:
english
File:
PDF, 425 KB
english, 2000
7

Determination of SiO2–Si interface trap level density (Dit) by vibrating capacitor method

Year:
2000
Language:
english
File:
PDF, 228 KB
english, 2000
8

Thermal analysis of solid-state devices and circuits: an analytical approach

Year:
2000
Language:
english
File:
PDF, 187 KB
english, 2000
10

Optoelectronic properties of CdO/Si photodetectors

Year:
2000
Language:
english
File:
PDF, 197 KB
english, 2000
15

An analytical model for the 3D-RESURF effect

Year:
2000
Language:
english
File:
PDF, 331 KB
english, 2000
16

Fast gate turn-off in a merged thyristor-like structure

Year:
2000
Language:
english
File:
PDF, 154 KB
english, 2000
20

A MOSFET gate current model with the direct tunneling mechanism

Year:
2000
Language:
english
File:
PDF, 113 KB
english, 2000
23

A physics-based electron gate current model for fully depleted SOI MOSFETs

Year:
2000
Language:
english
File:
PDF, 178 KB
english, 2000
24

Electrical fatigue response for ferroelectric ceramics under electrical cyclic load

Year:
2000
Language:
english
File:
PDF, 193 KB
english, 2000