Two-step stress methodology for monitoring the gate oxide degradation in MOS devices
R. Rodrı́guez, E. Miranda, M. Nafrı́a, J. Suñé, X. AymerichVolume:
45
Year:
2001
Language:
english
Pages:
9
DOI:
10.1016/s0038-1101(00)00266-5
File:
PDF, 372 KB
english, 2001