Volume 45; Issue 8

Main
Solid-State Electronics
Volume 45; Issue 8

Solid-State Electronics

Volume 45; Issue 8

1

Optical and structural characterization of Si nanocrystals ion beam synthesized in SiO2: correlation between the surface passivation and the photoluminescence emission

M López, B Garrido, C Bonafos, A Pérez-Rodrı́guez, J.R Morante

Journal:

Solid-State Electronics

Year:

2001

Language:

english

File:

PDF, 215 KB

english, 2001

2

Ultra-thin SiO2 film studies: index, thickness, roughness and the initial oxidation regime

Eugene A. Irene

Journal:

Solid-State Electronics

Year:

2001

Language:

english

File:

PDF, 469 KB

english, 2001

3

Photo-induced growth of dielectrics with excimer lamps

Ian W. Boyd, Jun-Ying Zhang

Journal:

Solid-State Electronics

Year:

2001

Language:

english

File:

PDF, 475 KB

english, 2001

4

Feasibility of an isolation by local oxidation of silicon without field implant

J.L Fay, J Beluch, B Despax, G Sarrabayrouse

Journal:

Solid-State Electronics

Year:

2001

Language:

english

File:

PDF, 145 KB

english, 2001

5

Characteristic photoluminescence properties of Si nanocrystals in SiO2 fabricated by ion implantation and annealing

Tsutomu Shimizu-Iwayama, Takayuki Hama, David E Hole, Ian W Boyd

Journal:

Solid-State Electronics

Year:

2001

Language:

english

File:

PDF, 209 KB

english, 2001

6

Breakdown and anti-breakdown events in high-field stressed ultrathin gate oxides

E Miranda, J Suñé, R Rodrı́guez, M Nafrı́a, X Aymerich

Journal:

Solid-State Electronics

Year:

2001

Language:

english

File:

PDF, 303 KB

english, 2001

7

The different roles of charged and neutral atomic and molecular oxidising species in silicon oxidation from ab initio calculations

M.A Szymanski, A.M Stoneham, A Shluger

Journal:

Solid-State Electronics

Year:

2001

Language:

english

File:

PDF, 455 KB

english, 2001

8

Time decay of stress induced leakage current in thin gate oxides by low-field electron injection

A Cester, A Paccagnella, G Ghidini

Journal:

Solid-State Electronics

Year:

2001

Language:

english

File:

PDF, 476 KB

english, 2001

9

Comparison of oxide leakage currents induced by ion implantation and high field electric stress

D Goguenheim, A Bravaix, C Monserie, J.M Moragues, P Lambert, P Boivin

Journal:

Solid-State Electronics

Year:

2001

Language:

english

File:

PDF, 456 KB

english, 2001

10

Two-step stress methodology for monitoring the gate oxide degradation in MOS devices

R. Rodrı́guez, E. Miranda, M. Nafrı́a, J. Suñé, X. Aymerich

Journal:

Solid-State Electronics

Year:

2001

Language:

english

File:

PDF, 372 KB

english, 2001

11

Effect of boron on gate oxide degradation and reliability in PMOS devices

Tomasz Brozek, Carl Kyono, Vida Ilderem

Journal:

Solid-State Electronics

Year:

2001

Language:

english

File:

PDF, 181 KB

english, 2001

12

Organic thin film transistors: from active materials to novel applications

L. Torsi, N. Cioffi, C. Di Franco, L. Sabbatini, P.G. Zambonin, T. Bleve-Zacheo

Journal:

Solid-State Electronics

Year:

2001

Language:

english

File:

PDF, 768 KB

english, 2001

13

Experimental study of the current characteristics of thin silicon oxide films under dynamic stress

J.-W Zahlmann-Nowitzki, L Nebrich, P Seegebrecht

Journal:

Solid-State Electronics

Year:

2001

Language:

english

File:

PDF, 205 KB

english, 2001

14

Suppression of boron penetration through thin gate oxides by nitrogen implantation into the gate electrode

M Herden, A.J Bauer, M Beichele, H Ryssel

Journal:

Solid-State Electronics

Year:

2001

Language:

english

File:

PDF, 178 KB

english, 2001

15

Silicon on insulator technologies and devices: from present to future

Sorin Cristoloveanu

Journal:

Solid-State Electronics

Year:

2001

Language:

english

File:

PDF, 327 KB

english, 2001

16

Investigation of plasma damage effects on characteristics and reliability of MOS devices with thin gate dielectrics

Tomasz Brozek, John Huber, James Walls

Journal:

Solid-State Electronics

Year:

2001

Language:

english

File:

PDF, 338 KB

english, 2001

17

Formation of atomically smooth, ultrathin oxides on Si(1 1 3)

H.-J. Müssig, J. Da̧browski, S. Hinrich

Journal:

Solid-State Electronics

Year:

2001

Language:

english

File:

PDF, 4.27 MB

english, 2001

18

Theory and applications of internal photoemission in the MOS system at low electric fields

Henryk M. Przewlocki

Journal:

Solid-State Electronics

Year:

2001

Language:

english

File:

PDF, 429 KB

english, 2001

19

Growth and characterization of epitaxial ferroelectric PbZrxTi1−xO3 thin film capacitors with SrRuO3 electrodes for non-volatile memory applications

C. Guerrero, J. Roldán, C. Ferrater, M.V. Garcia-Cuenca, F. Sánchez, M. Varela

Journal:

Solid-State Electronics

Year:

2001

Language:

english

File:

PDF, 465 KB

english, 2001

20

Select transistor modulated cell array structure test application in EEPROM process reliability

Federico Pio, Enrico Gomiero

Journal:

Solid-State Electronics

Year:

2001

Language:

english

File:

PDF, 396 KB

english, 2001

21

Hot-carrier degradation in deep-submicrometer nMOSFETs: lightly doped drain vs. large angle tilt implanted drain

J.M. Rafı́, F. Campabadal

Journal:

Solid-State Electronics

Year:

2001

Language:

english

File:

PDF, 246 KB

english, 2001

22

High electric field induced positive charges in thin gate oxide

P. Bellutti, N. Zorzi

Journal:

Solid-State Electronics

Year:

2001

Language:

english

File:

PDF, 159 KB

english, 2001

23

Structural, ellipsometry and photoluminescence spectroscopy studies of silicon nanograins embedded in a silica matrix

S. Charvet, R. Madelon, R. Rizk

Journal:

Solid-State Electronics

Year:

2001

Language:

english

File:

PDF, 170 KB

english, 2001

24

Anodic oxidation as a low thermal budget process for passivation of SiGe

Journal:

Solid-State Electronics

Year:

2001

Language:

english

File:

PDF, 581 KB

english, 2001

25

High quality thin oxynitride by RTP annealing of in situ steam generation oxides for flash memory applications

D Brazzelli, G Ghidini, B Crivelli, R Zonca, M Bersani

Journal:

Solid-State Electronics

Year:

2001

Language:

english

File:

PDF, 700 KB

english, 2001

26

Reliability of ultra-thin N2O-nitrided oxides grown by RTP under low pressure in different gas atmospheres

M. Beichele, A.J. Bauer, M. Herden, H. Ryssel

Journal:

Solid-State Electronics

Year:

2001

Language:

english

File:

PDF, 175 KB

english, 2001

27

Evolution from soft to hard breakdown in thin gate oxides: effect of oxide thickness, capacitor area and stress current

A Cacciato, S Evseev, H Valk

Journal:

Solid-State Electronics

Year:

2001

Language:

english

File:

PDF, 229 KB

english, 2001

28

Transport mechanisms and charge trapping in thin dielectric/Si nano-crystals structures

B. De Salvo, G. Ghibaudo, P. Luthereau, T. Baron, B. Guillaumot, G. Reimbold

Journal:

Solid-State Electronics

Year:

2001

Language:

english

File:

PDF, 344 KB

english, 2001

29

Low voltage and temperature effects on SILC in stressed ultrathin oxide films

A Meinertzhagen, D Zander, C Petit, M Jourdain, D Gogenheim

Journal:

Solid-State Electronics

Year:

2001

Language:

english

File:

PDF, 258 KB

english, 2001

30

Tantalum pentoxide obtained from TaNx and TaSi2 anodisation: an inexpensive and thermally stable high k dielectric

S. Dueñas, E. Castán, J. Barbolla, R.R. Kola, P.A. Sullivan

Journal:

Solid-State Electronics

Year:

2001

Language:

english

File:

PDF, 289 KB

english, 2001

31

A recombination- and trap-assisted tunneling model for stress-induced leakage current

Daniele Ielmini, Alessandro S. Spinelli, Andrea L. Lacaita, Andrea Martinelli, Gabriella Ghidini

Journal:

Solid-State Electronics

Year:

2001

Language:

english

File:

PDF, 217 KB

english, 2001

32

Determination of the electrical properties of ultrathin silicon-based dielectric films: thermally grown SiNx

N. Pic, A. Glachant, S. Nitsche, J.Y. Hoarau, D. Goguenheim, D. Vuillaume, A. Sibai, C. Chaneliere

Journal:

Solid-State Electronics

Year:

2001

Language:

english

File:

PDF, 237 KB

english, 2001

33

Preface

Blas Garrido, Joan Ramón Morante

Journal:

Solid-State Electronics

Year:

2001

Language:

english

File:

PDF, 35 KB

english, 2001

34

Single crystalline silicon dioxide films on Mo(1 1 2)

T. Schroeder, A. Hammoudeh, M. Pykavy, N. Magg, M. Adelt, M. Bäumer, H.-J. Freund

Journal:

Solid-State Electronics

Year:

2001

Language:

english

File:

PDF, 1.37 MB

english, 2001

35

Silicon anodic oxides grown in the oscillatory anodisation regime – kinetics of growth, composition and electrical properties

Vitali Parkhutik

Journal:

Solid-State Electronics

Year:

2001

Language:

english

File:

PDF, 1.30 MB

english, 2001

To build up a library is to create a life. It’s never just a random collection of books.

— Carlos María Domínguez

Official channel

Z-Library Desktop Launcher

Tor version

Z-Library

Z-Library Since 2009 support@z-lib.do

EnglishРусскийEspañolItalianoελληνικάاللغة العربيةBahasa IndonesiaBahasa Malaysiaहिन्दीDeutschFrançaisPortuguêsУкраїнськаPolski中文繁體中文日本語Tiếng ViệtAzərbaycan DiliՀայոց լեզուภาษาไทยTürk Diliქართველიবাংলাپښتوతెలుగుاردو한국어SrpskiБългарски