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Evolution from soft to hard breakdown in thin gate oxides: effect of oxide thickness, capacitor area and stress current
A Cacciato, S Evseev, H ValkVolume:
45
Year:
2001
Language:
english
Pages:
6
DOI:
10.1016/s0038-1101(01)00067-3
File:
PDF, 229 KB
english, 2001