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Secondary impact ionization and device aging in deep submicron MOS devices with various transistor architectures
B. Marchand, B. Cretu, G. Ghibaudo, F. Balestra, D. Blachier, C. Leroux, S. Deleonibus, G. Guégan, G. Reimbold, S. Kubicek, K. DeMeyerVolume:
46
Year:
2002
Language:
english
Pages:
6
DOI:
10.1016/s0038-1101(01)00105-8
File:
PDF, 284 KB
english, 2002