Volume 46; Issue 3

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Solid-State Electronics
Volume 46; Issue 3

Solid-State Electronics

Volume 46; Issue 3

1

Design considerations for CMOS near the limits of scaling

David J. Frank, Yuan Taur

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 236 KB

english, 2002

2

Ultra-thin gate oxide reliability projections

B.E. Weir, M.A. Alam, P.J. Silverman, F. Baumann, D. Monroe, J.D. Bude, G.L. Timp, A. Hamad, Y. Ma, M.M. Brown, D. Hwang, T.W. Sorsch, A. Ghetti, G.D. Wilk

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 205 KB

english, 2002

3

Continued growth in CMOS beyond 0.10 μm

T. Sugii, Y. Momiyama, K. Goto

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 304 KB

english, 2002

4

Secondary impact ionization and device aging in deep submicron MOS devices with various transistor architectures

B. Marchand, B. Cretu, G. Ghibaudo, F. Balestra, D. Blachier, C. Leroux, S. Deleonibus, G. Guégan, G. Reimbold, S. Kubicek, K. DeMeyer

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 284 KB

english, 2002

5

A 0.10 μm buried p-channel MOSFET with through the gate boron implantation and arsenic tilted pocket

G. Guegan, S. Deleonibus, C. Caillat, S. Tedesco, B. Dal’zotto, M. Heitzmann, M.E. Nier, P. Mur

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 460 KB

english, 2002

6

A 20 nm physical gate length NMOSFET with a 1.2 nm gate oxide fabricated by mixed dry and wet hard mask etching

C. Caillat, S. Deleonibus, G. Guegan, M. Heitzmann, M.E. Nier, S. Tedesco, B. Dal'zotto, F. Martin, P. Mur, A.M. Papon, G. Lecarval, B. Previtali, A. Toffoli, F. Allain, S. Biswas, F. Jourdan, P. Fugi

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 359 KB

english, 2002

7

Development of a RF large signal MOSFET model, based on an equivalent circuit, and comparison with the BSIM3v3 compact model

E.P. Vandamme, D. Schreurs, C. van Dinther, G. Badenes, L. Deferm

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 184 KB

english, 2002

8

1/f noise measurements in n-channel MOSFETs processed in 0.25 μm technology: Extraction of BSIM3v3 noise parameters

Y. Akue Allogo, M. de Murcia, J.C. Vildeuil, M. Valenza, P. Llinares, D. Cottin

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 163 KB

english, 2002

9

Reliability of ultra-thin film deep submicron SIMOX nMOSFETs

O. Potavin, S. Haendler, J. Jomaah, F. Balestra, C. Raynaud

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 318 KB

english, 2002

10

Fringing fields in sub-0.1 μm fully depleted SOI MOSFETs: optimization of the device architecture

T. Ernst, C. Tinella, C. Raynaud, S. Cristoloveanu

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 407 KB

english, 2002

11

On the origin of the LF noise in Si/Ge MOSFETs

Gérard Ghibaudo, Jan Chroboczek

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 205 KB

english, 2002

12

Electrical characterization and modeling of MOS structures with an ultra-thin oxide

R. Clerc, B. De Salvo, G. Ghibaudo, G. Reimbold, G. Pananakakis

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 282 KB

english, 2002

13

Modeling of stress-induced leakage current and impact ionization in MOS devices

Daniele Ielmini, Alessandro Sottocornola Spinelli, Andrea Leonardo Lacaita, Gabriella Ghidini

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 158 KB

english, 2002

14

Simulation of polysilicon quantization and its effect on n- and p-MOSFET performance

Alessandro S. Spinelli, Andrea Pacelli, Andrea L. Lacaita

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 197 KB

english, 2002

15

Analytical and numerical study of the impact of HALOs on short channel and hot carrier effects in scaled MOSFETs

S. Zanchetta, A. Todon, A. Abramo, L. Selmi, E. Sangiorgi

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 227 KB

english, 2002

16

Quantum transport in a cylindrical sub-0.1 μm silicon-based MOSFET

S.N. Balaban, E.P. Pokatilov, V.M. Fomin, V.N. Gladilin, J.T. Devreese, W. Magnus, W. Schoenmaker, M. Van Rossum, B. Sorée

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 731 KB

english, 2002

17

Computational investigation of the accuracy of constant-dC scanning capacitance microscopy for ultra-shallow doping profile characterization

Lorenzo Ciampolini, Mauro Ciappa, Paolo Malberti, Wolfgang Fichtner

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 178 KB

english, 2002

18

Enhancement of device performance in vertical sub-100 nm MOS devices due to local channel doping

C. Fink, K.G. Anil, H. Geiger, W. Hansch, F. Kaesen, J. Schulze, T. Sulima, I. Eisele

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 481 KB

english, 2002

19

0.25 μm fully depleted SOI MOSFETs for RF mixed analog-digital circuits, including a comparison with partially depleted devices with relation to high frequency noise parameters

M Vanmackelberg, C Raynaud, O Faynot, J.-L Pelloie, C Tabone, A Grouillet, F Martin, G Dambrine, L Picheta, E Mackowiak, P Llinares, J Sevenhans, E Compagne, G Fletcher, D Flandre, V Dessard, D Vanhoe

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 547 KB

english, 2002

20

Stress induced leakage current under pulsed voltage stress

A. Cester, A. Paccagnella, G. Ghidini

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 435 KB

english, 2002

21

Foreword

Francis Balestra

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 32 KB

english, 2002

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