A 20 nm physical gate length NMOSFET with a 1.2 nm gate...

Solid-State Electronics 2002 Vol. 46; Iss. 3

A 20 nm physical gate length NMOSFET with a 1.2 nm gate oxide fabricated by mixed dry and wet hard mask etching

C. Caillat, S. Deleonibus, G. Guegan, M. Heitzmann, M.E. Nier, S. Tedesco, B. Dal'zotto, F. Martin, P. Mur, A.M. Papon, G. Lecarval, B. Previtali, A. Toffoli, F. Allain, S. Biswas, F. Jourdan, P. Fugi
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
46
Year:
2002
Language:
english
Pages:
4
DOI:
10.1016/s0038-1101(01)00107-1
File:
PDF, 359 KB
english, 2002
Conversion to is in progress
Conversion to is failed