1/f noise measurements in n-channel MOSFETs processed in...

Solid-State Electronics 2002 Vol. 46; Iss. 3

1/f noise measurements in n-channel MOSFETs processed in 0.25 μm technology: Extraction of BSIM3v3 noise parameters

Y. Akue Allogo, M. de Murcia, J.C. Vildeuil, M. Valenza, P. Llinares, D. Cottin
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Volume:
46
Year:
2002
Language:
english
Pages:
6
DOI:
10.1016/s0038-1101(01)00109-5
File:
PDF, 163 KB
english, 2002
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