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Fringing fields in sub-0.1 μm fully depleted SOI MOSFETs: optimization of the device architecture
T. Ernst, C. Tinella, C. Raynaud, S. CristoloveanuVolume:
46
Year:
2002
Language:
english
Pages:
6
DOI:
10.1016/s0038-1101(01)00111-3
File:
PDF, 407 KB
english, 2002