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Modeling of stress-induced leakage current and impact ionization in MOS devices
Daniele Ielmini, Alessandro Sottocornola Spinelli, Andrea Leonardo Lacaita, Gabriella GhidiniVolume:
46
Year:
2002
Language:
english
Pages:
6
DOI:
10.1016/s0038-1101(01)00114-9
File:
PDF, 158 KB
english, 2002