Modeling of stress-induced leakage current and impact...

Modeling of stress-induced leakage current and impact ionization in MOS devices

Daniele Ielmini, Alessandro Sottocornola Spinelli, Andrea Leonardo Lacaita, Gabriella Ghidini
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
46
Year:
2002
Language:
english
Pages:
6
DOI:
10.1016/s0038-1101(01)00114-9
File:
PDF, 158 KB
english, 2002
Conversion to is in progress
Conversion to is failed