0.25 μm fully depleted SOI MOSFETs for RF mixed...

Solid-State Electronics 2002 Vol. 46; Iss. 3

0.25 μm fully depleted SOI MOSFETs for RF mixed analog-digital circuits, including a comparison with partially depleted devices with relation to high frequency noise parameters

M Vanmackelberg, C Raynaud, O Faynot, J.-L Pelloie, C Tabone, A Grouillet, F Martin, G Dambrine, L Picheta, E Mackowiak, P Llinares, J Sevenhans, E Compagne, G Fletcher, D Flandre, V Dessard, D Vanhoe
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Volume:
46
Year:
2002
Language:
english
Pages:
8
DOI:
10.1016/s0038-1101(01)00120-4
File:
PDF, 547 KB
english, 2002
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