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Improved current drivability and poly-gate depletion of submicron PMOSFET with poly-SiGe gate and ultra-thin nitride gate dielectric
C.H. Chen, Y.K. Fang, C.W. Yang, S.F. Ting, Y.S. Tsair, C.N. Chang, T.H. Hou, M.F. Wang, M.C. Yu, C.L. Lin, S.C. Chen, C.H. Yu, M.S. LiangVolume:
46
Year:
2002
Language:
english
Pages:
3
DOI:
10.1016/s0038-1101(01)00262-3
File:
PDF, 129 KB
english, 2002