Volume 46; Issue 4

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Solid-State Electronics
Volume 46; Issue 4

Solid-State Electronics

Volume 46; Issue 4

1

Factors limiting the current gain in high-voltage 4H-SiC npn-BJTs

Pavel A Ivanov, Michael E Levinshtein, Sergey L Rumyantsev, Sei-Hyung Ryu, Anant K Agarwal, John W Palmour

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 120 KB

english, 2002

2

Full-band matrix solution of the Boltzmann transport equation and electron impact ionization in GaAs

Nicolas Cavassilas, Frédéric Aniel, Guy Fishman, Robert Adde

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 267 KB

english, 2002

3

Simple determination of the profile of bulk generation lifetime in semiconductor

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 70 KB

english, 2002

4

Observation of dislocation etch pits in epitaxial lateral overgrowth GaN by wet etching

T.C Wen, W.I Lee, J.K Sheu, G.C Chi

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 273 KB

english, 2002

5

Improved current drivability and poly-gate depletion of submicron PMOSFET with poly-SiGe gate and ultra-thin nitride gate dielectric

C.H. Chen, Y.K. Fang, C.W. Yang, S.F. Ting, Y.S. Tsair, C.N. Chang, T.H. Hou, M.F. Wang, M.C. Yu, C.L. Lin, S.C. Chen, C.H. Yu, M.S. Liang

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 129 KB

english, 2002

6

Changes in carrier profiles of bonded SOI wafers with thermal annealing measured by the spreading resistance method

Masaya Ichimura, Shinya Ito, Eisuke Arai

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 254 KB

english, 2002

7

The 1.3–1.6 nm nitrided oxide prepared by NH3 nitridation and rapid thermal annealing for 0.1 μm and beyond CMOS technology application

C.H. Chen, Y.K. Fang, C.W. Yang, Y.S. Tsair, M.F. Wang, L.G. Yao, S.C. Chen, C.H. Yu, M.S. Liang

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 263 KB

english, 2002

8

Current rise time constants in switch-on process of SiC thyristors

Tigran T Mnatsakanov, Michael E Levinshtein, Sergey N Yurkov, Pavel A Ivanov, Aleksey G Tandoev, John W Palmour, Anant K Agarwal

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 108 KB

english, 2002

9

High-speed InGaP/InGaAsN/GaAs NpN double heterojunction bipolar transistors with low turn-on voltage

P.C Chang, C Monier, A.G Baca, N.Y Li, F Newman, E Armour, H.Q Hou

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 88 KB

english, 2002

10

Comparison of AlGaN/GaN high electron mobility transistors grown on AlN/SiC templates or sapphire

J.W Johnson, J Han, A.G Baca, R.D Briggs, R.J Shul, J.R Wendt, C Monier, F Ren, B Luo, S.N.G Chu, D Tsvetkov, V Dmitriev, S.J Pearton

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 907 KB

english, 2002

11

Determination of semiconductor resistance under a contact

M. Ahmad, A.P. Shah, D.K. Sharma, N.R. Roy, B.M. Arora

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 134 KB

english, 2002

12

Body charge modelling for accurate simulation of small-signal behaviour in floating body SOI

James Benson, William Redman-White, Nele V D'Halleweyn, Craig A Easson, Michael J Uren

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 275 KB

english, 2002

13

Modeling of direct tunneling for thin SiO2 film on n-type Si(1 0 0) by WKB method considering the quantum effect in the accumulation layer

Naoto Matsuo, Yoshinori Takami, Yasunori Kitagawa

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 104 KB

english, 2002

14

High-gain MOS tunnel emitter transistors

Erik Aderstedt, Igor Medugorac, Per Lundgren

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 202 KB

english, 2002

15

High breakdown M–I–M structures on bulk AlN

B Luo, J.W Johnson, O Kryliouk, F Ren, S.J Pearton, S.N.G Chu, A.E Nikolaev, Yu.V Melnik, V.A Dmitriev, T.J Anderson

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 299 KB

english, 2002

16

Release of multi-layer metal structure in MEMS devices by dry etching technique

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 99 KB

english, 2002

17

Observation of photoinduced shot noise in planar Mo/n-Si/Mo structures with undepleted region

S. Niemcharoen, T. Ando, S. Supadech, Y. Yasumura, K. Sato

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 112 KB

english, 2002

18

DX centers in Si-doped InxAl1−xAs (0.3⩽x⩽0.5)

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 134 KB

english, 2002

19

Organic light-emitting diode on indium zinc oxide film prepared by ion assisted deposition dc sputtering system

W.J Lee, Y.-K Fang, J.-J Ho, C.-Y Chen, L.-H Chiou, S.-J Wang, F Dai, T Hsieh, R.-Y Tsai, D Huang, F.C Ho

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 154 KB

english, 2002

20

Quantitative analysis of high frequency performance of modified Darlington pair

A.M.H Sayed ElAhl, M.M.E Fahmi, S.N Mohammad

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 111 KB

english, 2002

21

Generalization of Moll–Ross relations for heterojunction bipolar transistors

S.Noor Mohammad

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 61 KB

english, 2002

22

Surface passivation of AlGaN/GaN HEMTs using MBE-grown MgO or Sc2O3

B Luo, J.W Johnson, B.P Gila, A Onstine, C.R Abernathy, F Ren, S.J Pearton, A.G Baca, A.M Dabiran, A.M Wowchack, P.P Chow

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 665 KB

english, 2002

23

An investigation on RF CMOS stability related to bias and scaling

Jiong-Guang Su, Shyh-Chyi Wong, Chun-Yen Chang

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 328 KB

english, 2002

24

A critical review of thermal models for electro-thermal simulation

V. d'Alessandro, N. Rinaldi

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 241 KB

english, 2002

25

Comparison of the electrical behavior in the subthreshold region between laser and solid phase crystallized polysilicon thin film transistors

L. Pichon, A. Mercha, R. Carin, T. Mohammed-Brahim, O. Bonnaud, Y. Helen

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 389 KB

english, 2002

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