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The 1.3–1.6 nm nitrided oxide prepared by NH3 nitridation and rapid thermal annealing for 0.1 μm and beyond CMOS technology application
C.H. Chen, Y.K. Fang, C.W. Yang, Y.S. Tsair, M.F. Wang, L.G. Yao, S.C. Chen, C.H. Yu, M.S. LiangVolume:
46
Year:
2002
Language:
english
Pages:
6
DOI:
10.1016/s0038-1101(01)00274-x
File:
PDF, 263 KB
english, 2002