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Comparison of AlGaN/GaN high electron mobility transistors grown on AlN/SiC templates or sapphire
J.W Johnson, J Han, A.G Baca, R.D Briggs, R.J Shul, J.R Wendt, C Monier, F Ren, B Luo, S.N.G Chu, D Tsvetkov, V Dmitriev, S.J PeartonVolume:
46
Year:
2002
Language:
english
Pages:
11
DOI:
10.1016/s0038-1101(01)00284-2
File:
PDF, 907 KB
english, 2002