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Transient response of highly doped thin channel GaN metal–semiconductor and metal-oxide–semiconductor field effect transistors
N. Pala, S.L. Rumyantsev, M.S. Shur, X. Hu, A. Tarakji, R. Gaska, M. Asif Khan, G. Simin, J. YangVolume:
46
Year:
2002
Language:
english
Pages:
4
DOI:
10.1016/s0038-1101(01)00302-1
File:
PDF, 919 KB
english, 2002