Volume 46; Issue 5

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Solid-State Electronics
Volume 46; Issue 5

Solid-State Electronics

Volume 46; Issue 5

1

Analysis of the diode characteristics using the thermodynamic theories

Yann Jiun Maa, Ibrahim M. Abdel-Motaleb

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 126 KB

english, 2002

2

A macro model of silicon spiral inductor

C.Y. Su, L.P. Chen, S.J. Chang, B.M. Tseng, D.C. Lin, G.W. Huang, Y.P. Ho, H.Y. Lee, J.F. Kuan, W.Y. Wen, P. Liou, C.L. Chen, L.Y. Leu, K.A. Wen, C.Y. Chang

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 717 KB

english, 2002

3

Development of advanced plasma process with an optical emission spectroscopy-based end-point technique for etching of AlGaAs over GaAs in manufacture of heterojunction bipolar transistors

J.W. Lee, M.H. Jeon, G.S. Cho, H.C. Yim, S.K. Chang, K.K. Kim, M. Devre, D. Johnson, J.N. Sasserath, S.J. Pearton

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 127 KB

english, 2002

4

Current–voltage characteristics of an integrated Schottky diode

M Tarplee, V Madangarli, T.S Sudarshan

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 167 KB

english, 2002

5

DC and microwave performance of recessed-gate GaN MESFETs using ICP-RIE

C Lee, W Lu, E Piner, I Adesida

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 115 KB

english, 2002

6

Transient response of highly doped thin channel GaN metal–semiconductor and metal-oxide–semiconductor field effect transistors

N. Pala, S.L. Rumyantsev, M.S. Shur, X. Hu, A. Tarakji, R. Gaska, M. Asif Khan, G. Simin, J. Yang

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 919 KB

english, 2002

7

Device simulation of surface quantization effect on MOSFETs with simplified density-gradient method

Kazuya Matsuzawa, Shin-ichi Takagi, Mariko Takayanagi, Hiroyoshi Tanimoto

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 229 KB

english, 2002

8

Study on ZnSnO3 sensitive material based on combustible gases

Xing-Hui Wu, Yu-De Wang, Zi-Hua Tian, Huan-Lin Liu, Zhen-Lai Zhou, Yan-Feng Li

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 232 KB

english, 2002

9

A review of SiC static induction transistor development for high-frequency power amplifiers

Y.M. Sung, J.B. Casady, J.B. Dufrene, A.K. Agarwal

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 435 KB

english, 2002

10

Substrate-triggered ESD clamp devices for use in power-rail ESD clamp circuits

Ming-Dou Ker, Tung-Yang Chen, Chung-Yu Wu

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 890 KB

english, 2002

11

The effects of scaling on the performance of small-signal MOS amplifiers

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 264 KB

english, 2002

12

Effect of plasma enhanced chemical vapor deposition of SiNx on n-GaN Schottky rectifiers

B. Luo, J.W. Johnson, F. Ren, K.W. Baik, S.J. Pearton

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 520 KB

english, 2002

13

Bulk-limited conduction of Ge-implanted thermally grown SiO2 layers

J Zhao, L Rebohle, T Gebel, J von Borany, W Skorupa

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 142 KB

english, 2002

14

Fabrication of AlGaN/GaN heterostructure field effect transistor using room-temperature ohmic contact

Chang Min Jeon, Ho Won Jang, Kyoung Jin Choi, Sung-Bum Bae, Jung-Hee Lee, Jong-Lam Lee

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 123 KB

english, 2002

15

Morphological study of the Al–Ti ohmic contact to p-type SiC

S.E. Mohney, B.A. Hull, J.Y. Lin, J. Crofton

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 295 KB

english, 2002

16

Optimization of gas flow and etch depth uniformity for plasma etching of large area GaAs wafers

J.W. Lee, P.G. Jung, M. Devre, R. Westermann, S.J. Pearton

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 356 KB

english, 2002

17

Finite difference analysis of thermal characteristics of CW operation 850 nm lateral current injection and implant-apertured VCSEL with flip-chip bond design

R. Mehandru, G. Dang, S. Kim, F. Ren, W.S. Hobson, J. Lopata, S.J. Pearton, W. Chang, H. Shen

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 290 KB

english, 2002

18

Field programmable spin-logic realized with tunnelling-magnetoresistance devices

R. Richter, H. Boeve, L. Bär, J. Bangert, G. Rupp, G. Reiss, J. Wecker

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 179 KB

english, 2002

19

Scaling of pseudomorphic high electron mobility transistors to decanano dimensions

K. Kalna, S. Roy, A. Asenov, K. Elgaid, I. Thayne

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 357 KB

english, 2002

20

An accurate charge control model for spontaneous and piezoelectric polarization dependent two-dimensional electron gas sheet charge density of lattice-mismatched AlGaN/GaN HEMTs

Rashmi, Abhinav Kranti, S. Haldar, R.S. Gupta

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 221 KB

english, 2002

21

Electric field effects associated with the backside Ge profile in SiGe HBTs

Gang Zhang, John D. Cressler, Lou Lanzerotti, Rob Johnson, Zhenrong Jin, Shiming Zhang, Guofu Niu, Alvin Joseph, David Harame

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 217 KB

english, 2002

22

Reduction of dark current in an n-type In0.3Ga0.7As/GaAs quantum well infrared photodetector by using a camel diode structure

Jinsung Park, Seong-June Jo, Songcheol Hong, Jong-In Song

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 280 KB

english, 2002

23

De-embedding length-dependent edge-leakage current in shallow trench isolation submicron MOSFETs

X Zhou, K.Y Lim

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 115 KB

english, 2002

24

A model for exciton formation in organic electroluminescent devices

H.L. Kwok, J.B. Xu

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 121 KB

english, 2002

25

Extraction of Schottky diode parameters including parallel conductance using a vertical optimization method

A. Ferhat-Hamida, Z. Ouennoughi, A. Hoffmann, R. Weiss

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 250 KB

english, 2002

26

The influence of geometric structure on the hot-carrier-effect immunity for deep-sub-micron grooved gate PMOSFET

Hongxia Ren, Yue Hao

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 334 KB

english, 2002