Impact of front oxide quality on transient effects and...

Solid-State Electronics 2002 Vol. 46; Iss. 7

Impact of front oxide quality on transient effects and low-frequency noise in partially and fully depleted SOI N-MOSFETs

S. Haendler, F. Dieudonné, J. Jomaah, F. Balestra, C. Raynaud, J.L. Pelloie
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Volume:
46
Year:
2002
Language:
english
Pages:
5
DOI:
10.1016/s0038-1101(02)00035-7
File:
PDF, 682 KB
english, 2002
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