Volume 46; Issue 7

Solid-State Electronics

Volume 46; Issue 7
1

Foreword

Francis Balestra
Journal:
Solid-State Electronics
Year:
2002
Language:
english
File:
PDF, 29 KB
english, 2002
2

The vertical replacement-gate (VRG) MOSFET

J.M. Hergenrother, Sang-Hyun Oh, T. Nigam, D. Monroe, F.P. Klemens, A. Kornblit
Journal:
Solid-State Electronics
Year:
2002
Language:
english
File:
PDF, 1.14 MB
english, 2002
4

Substrate current and degradation of trench LDD transistors

E. Landgraf, F. Hofmann, T. Schulz, H. von Philipsborn
Journal:
Solid-State Electronics
Year:
2002
Language:
english
File:
PDF, 300 KB
english, 2002
7

Current status and future directions of SOI technology

Makoto Yoshimi
Journal:
Solid-State Electronics
Year:
2002
Language:
english
File:
PDF, 190 KB
english, 2002
8

Planar and vertical double gate concepts

T Schulz, W Rösner, E Landgraf, L Risch, U Langmann
Journal:
Solid-State Electronics
Year:
2002
Language:
english
File:
PDF, 321 KB
english, 2002
11

An asymmetric channel SOI nMOSFET for improving DC and microwave characteristics

Morin Dehan, Jean-Pierre Raskin
Journal:
Solid-State Electronics
Year:
2002
Language:
english
File:
PDF, 238 KB
english, 2002
13

Soft breakdown current noise in ultra-thin gate oxides

A. Cester, L. Bandiera, G. Ghidini, I. Bloom, A. Paccagnella
Journal:
Solid-State Electronics
Year:
2002
Language:
english
File:
PDF, 261 KB
english, 2002
15

High-frequency operation potential of the tunnel emitter transistor

Erik Aderstedt, Per Lundgren
Journal:
Solid-State Electronics
Year:
2002
Language:
english
File:
PDF, 365 KB
english, 2002
16

Bardeen's approach for tunneling evaluation in MOS structures

R. Clerc, G. Ghibaudo, G. Pananakakis
Journal:
Solid-State Electronics
Year:
2002
Language:
english
File:
PDF, 186 KB
english, 2002