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Study of the reactive ion etching of 6H–SiC and 4H–SiC in SF6/Ar plasmas by optical emission spectroscopy and laser interferometry
N Camara, K ZekentesVolume:
46
Year:
2002
Language:
english
Pages:
5
DOI:
10.1016/s0038-1101(02)00129-6
File:
PDF, 258 KB
english, 2002